Radio communication apparatus and radio frequency power amplifier
AssigneeHitachi, Ltd.
InventorsHirotaka Ueno, Yasuhiro Nunogawa, Tetsuaki Adachi
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AssigneeHitachi, Ltd.
InventorsHirotaka Ueno, Yasuhiro Nunogawa, Tetsuaki Adachi
Estimating the term…
To reduce power consumption by increasing amplifying efficiency in a low power mode, there is provided a radio communication apparatus in which each of field effect transistors of a radio frequency power module in a multi-stage configuration is controlled by an APC circuit based on a power level instruction signal, and in which a correction circuit is incorporated between the gate of a final stage transistor and the APC circuit to apply a linear gate voltage to the final stage transistor when a High level signal based on the power level instruction signal is applied and to provide a maximum gate voltage of the final stage transistor which is equal to or lower than the gate voltages of other transistors and whose rate of increase relative to the output voltage of the APC circuit gradually reduces when a Low level signal based on the power instruction signal is applied. A high power mode is enabled when the output voltage of the APC circuit is equal to or higher than a prescribed voltage, and a low power mode is enabled when it is lower than the prescribed voltage.
A semiconductor amplifier circuit comprising:
A semiconductor amplifier circuit comprising:
A semiconductor amplifier circuit comprising:
A radio communication apparatus comprising:
A radio communication apparatus comprising:
A semiconductor amplifier circuit comprising:
Dependencies are inferred from the claim text.