Porous dielectric material and electronic devices fabricated therewith
AssigneeInternational Business Machines Corporation
InventorsCraig Jon Hawker, James L. Hedrick, Robert D. Miller, Willi Volksen
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Abstract
A novel dielectric composition is provided that is useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric composition is prepared by crosslinking a thermally decomposable porogen to a host polymer via a coupling agent, followed by heating to a temperature suitable to decompose the porogen. The porous materials that result have dielectric constants less than about 3.0, with some materials having dielectric constants less than about 2.5. Integrated circuit devices, integrated circuit packaging devices, and methods of manufacture are provided as well.
Claims46
An integrated circuit device comprising:
- (a) a substrate;
- (b) individual metallic circuit lines positioned on the substrate;
- and
- (c) a dielectric composition positioned over and/or between the individual metallic circuit lines, the dielectric composition comprised of a porous polymeric material having closed cell pores less than about 300 Å in diameter, a void percentage in the range of approximately 5% to 35%, and a dielectric constant of less than 3.0, wherein the polymeric material comprises a host polymer that has a pre-process molecular weight in the range of approximately 750 to 100,000 and a glass transition temperature of at least about 400° C.
A method for forming an integrated circuit, comprising:
- (a) depositing a metallic film on a substrate;
- (b) lithographically patterning the metallic film to provide a pattern of individual metallic circuit lines on the substrate;
- (c) preparing a solution of (i) a thermally labile porogen having a reactive site that enables covalent attachment to another molecular moiety, (ii) a thermally stable, low dielectric constant host polymer having a glass transition temperature Tg, and (iii) a coupling agent effective to covalently bind to both the reactive site of the porogen and the host polymer, and depositing the solution around the metallic lines on the substrate;
- (d) heating the solution to a temperature TC effective to couple the porogen to the host polymer via the coupling agent, whereby a polymeric matrix is formed in which the porogen is present as a discrete phase within a continuous phase formed by the host polymer;
- and
- (e) heating the polymeric matrix to a temperature TD effective to degrade the porogen without affecting the host polymer, thereby producing a dielectric material in the form of a porous structure, wherein TD is greater than TC but less than Tg.
An integrated circuit packaging device for providing signal and power current to an integrated circuit chip, comprising:
- (i) a substrate having electrical conductor means for connection to a circuit board,
- (ii) a plurality of alternating electrically insulating and conducting layers positioned on the substrate wherein at least one of the layers is comprised of a dielectric composition comprised of a porous polymeric material having closed cell pores less than about 300 Å in diameter, a void percentage in the range of approximately 5% to 35%, and a dielectric constant of less than 3.0, wherein the polymeric material comprises a host polymer that has a pre-process molecular weight in the range of approximately 750 to 100,000 and a glass transition temperature of at least about 400° C.
Dependencies are inferred from the claim text.