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US 2001/0040293 A1Published application
Semiconductor structure with a titanium aluminum nitride layer and method for fabricating same
AssigneeMicron Technology, Inc.
InventorsScott G. Meikle, Sung Kim
Life of this patent
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Abstract
A semiconductor device having a contact layer and a diffusion barrier layer is fabricated by preparing a semiconductor substrate, forming a layer of titanium/aluminum alloy on the surface of the substrate, and then heating the resultant structure in a nitrogen ambient to form a contact layer of titanium silicide interposed between the substrate and a diffusion barrier layer consisting of titanium/aluminum/nitride.
Claims22
A semiconductor device comprising:
- a contact layer comprising silicide;
- and
- a diffusion barrier layer adjacent to the contact layer, the diffusion barrier layer comprising an alloy of aluminum, nitride and a refractory metal.
A process of fabricating a semiconductor device comprising the steps of:
- forming a layer comprising an alloy of aluminum and a refractory metal;
- and
- nitridizing the alloy.
Dependencies are inferred from the claim text.