Semiconductor device and method for the fabrication thereof
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHiroaki Fujimoto, Tsuyoshi Hamatani, Toru Nomura
Life of this patent
Estimating the term…
Loading patent…
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHiroaki Fujimoto, Tsuyoshi Hamatani, Toru Nomura
Estimating the term…
Disclosed is a semiconductor device which comprises a semiconductor element having a plurality of electrodes, a plurality of external electrodes disposed around the periphery of the semiconductor element, a fine wire electrically connected between at least one of surfaces of each of the plural external electrodes and at least one of the plural electrodes of the semiconductor element, and an encapsulating resin which encapsulates the semiconductor element, the plural external electrodes, and the fine wires and whose external shape is a rectangular parallelepiped, wherein a bottom surface of the semiconductor element and a bottom surface of each of the plural external electrode are exposed from a bottom surface of the encapsulating resin and a top surface of the semiconductor element and a top surface of each of the plural external electrode are located substantially coplanar with each other.
A semiconductor device comprising:
A method for the fabrication of a semiconductor device comprising the steps of:
A semiconductor device comprising:
A method for the fabrication of a semiconductor device comprising the steps of:
A semiconductor device comprising:
A method for the fabrication of a semiconductor device comprising the steps of:
Dependencies are inferred from the claim text.