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US 2001/0040273 A1Published application
Semiconductor device
AssigneeKoninklijke Philips Electronics N.V.
InventorsRaymond J.E. Hueting, Erwin A. Hijen
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AssigneeKoninklijke Philips Electronics N.V.
InventorsRaymond J.E. Hueting, Erwin A. Hijen
Estimating the term…
A semiconductor device comprises one or more field effect devices (FD) having source and drain regions (5 and 6) spaced apart by a body region (3a). A gate structure (7a, 7b), preferably in a trench (4), controls a conduction channel in a portion (3b) of the body region (3a) between the source and drain regions. The device has one or more mesa structures (100) having end and side walls (100a to 100d). The body region (3a) extends between and meets at least the side walls (100c and 100d) of the mesa structure. The gate structure (7a, 7b) extends along and between the side walls such that the conduction channel accommodating portion (3b) extends along and between the side walls (100c and 100d). The source and drain regions (5 and 6) meet respective end walls (100a and 100b) of the mesa structure and/or its side walls (100c and 100d). At the mesa walls, a source electrode (S) contacts the source region (5) and a drain electrode (D) contacts the drain region (6).
A semiconductor device comprising a semiconductor body comprising a field effect device, the semiconductor body having source and drain regions spaced apart by a body region, the field effect device having a gate structure for controlling a conduction channel in a conduction channel accommodating portion of the body region between the source and drain regions, wherein the field effect device comprises a mesa structure having end walls and side walls, the source and drain regions meet respective end walls and part of the side walls of the mesa structure, source and drain electrodes contact the source and drain regions respectively at the walls of the mesa structure, the body region extends between and meets the side walls of the mesa structure, and the gate structure extends along and between the side walls such that the conduction channel accommodating portion extends along and between the side walls.
A semiconductor device comprising a field effect device formed as a mesa structure with source and drain regions at opposite ends of a trench formed in the mesa structure, a gate structure provided within the trench on the bottom and side walls of the trench to control a conduction channel between the source and drain regions, and source and drain electrodes that extend at least partly on the side walls of the mesa structure to contact respective parts of the source and drain regions that meet side walls of the mesa structure.
A semiconductor device as claimed in any one of the preceding claims, wherein the source and drain electrodes contact the source and drain regions over the whole depth of the walls of the mesa structure.
A semiconductor device as claimed in any one of the preceding claims, wherein a series of alternating source and drain regions is provided along the length of the mesa structure to form respective field effect devices that are connected in parallel to provide a higher power device.
A semiconductor device as claimed in any one of the preceding claims, and comprising a plurality of the mesa structures located side-by-side, with the field effect devices of the respective mesa structures connected in parallel to provide a higher power device.
A semiconductor device according to any one of the preceding claims, wherein the gate structure extends on top of and over the side walls of the mesa structure.
A semiconductor device according to any one of the preceding claims, wherein the source and drain electrodes extend along each surface of the source and drain regions, respectively, that forms part of the exposed surface area of the mesa structure.
A semiconductor device according to any one of the preceding claims, wherein the gate structure comprises an insulated gate structure.
Dependencies are inferred from the claim text.