Method of forming a semiconductor device and an improved deposition system

A method of forming a multi-layer structure over an insulating layer, said method comprising the steps of:

• selectively depositing a barrier layer on a predetermined region of an insulating layer by use of a first deposition mask;
• selectively depositing a metal seed layer made of a metal which is different in substance from said barrier layer by use of a second deposition mask, so that said metal seed layer extends not only on an entire surface of said barrier layer but also a peripheral region positioned outside said predetermined region of said insulating layer;
• and
• forming a metal plating layer made of said metal as said seed layer, so that said metal layer is adhered on said metal seed layer whereby said metal plating layer is separated from said barrier layer and also from said insulating layer.

A deposition system for forming a multi-layer structure over an insulating layer, said deposition system comprising:

• a first deposition chamber having a first deposition mask for selectively depositing a barrier layer on a predetermined region of an insulating layer;
• and
• a second deposition chamber having a second deposition mask for selectively depositing a metal seed layer made of a metal which is different in substance from said barrier layer, so that said metal seed layer extends not only on an entire surface of said barrier layer but also a peripheral region positioned outside said predetermined region of said insulating layer,
• wherein said first deposition mask has a first opening edge having a first diameter and said second mask has a second opening edge having a second diameter which is larger than said first diameter of said first deposition mask,
• whereby a metal plating layer made of said metal as said seed layer is formed on said metal seed layer, wherein said metal plating layer is separated from said barrier layer and also from said insulating layer.