Semiconductor sensor chip, method of manufacturing the same, and semiconductor sensor having the same

A method of manufacturing a semiconductor sensor chip, which comprises joining a silicon cap composed of a first silicon wafer and a silicon substrate composed of a second silicon wafer having a physical quantity sensing part and a wiring part through a junction layer composed of a low-fusing point glass composition, said method comprising:

• a first step of forming a low-fusing point glass film on a whole surface of one side of said first silicon wafer;
• a second step of forming a junction layer, cavities and through parts in said first silicon wafer having said low-fusing point glass film formed in said first step;
• a third step of joining said first silicon wafer processed in said first and second steps and said second silicon wafer having said physical quantity sensing part and said wiring part to thus form a joined body;
• and
• a fourth step of dividing said joined body formed in said third step into semiconductor sensor chips.

A method of manufacturing a semiconductor sensor chip, which comprises joining a silicon cap composed of a first silicon wafer and a silicon substrate composed of a second silicon wafer having a physical quantity sensing part and a wiring part through a junction layer including high polymer resin, said method comprising:

• a first step of forming said junction layer by applying a film, including high polymer resin and stamped in a predetermined shape, to one side of said first silicon wafer;
• a second step of forming cavities and through parts in said first silicon wafer having said junction layer formed in said first step;
• a third step of joining said first silicon wafer processed in said first and second steps and said second silicon wafer having said physical quantity sensing part and said wiring part to thus form a joined body;
• and
• a fourth step of dicing said joined body formed in said third step into semiconductor sensor chips.