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US 2001/0040254 A1Published application
Reference voltage supply circuit having reduced dispersion of an output voltage
AssigneeNEC Corporation
InventorTomio Takiguchi
Life of this patent
Estimating the term…
Abstract
A reference voltage supply circuit is provided with a PNP transistor. The PNP transistor has an N-type well for a base formed at a surface of a P-type semiconductor substrate. The reference voltage supply circuit is further provided with a resistor element connected to an emitter of the PNP transistor. The resistor element has an N-type well for a resistor at the surface of the P-type semiconductor substrate. The well is fabricated at the same time as when the N-type well for a base is fabricated.
Claims12
A reference voltage supply circuit comprising:
- a P-type semiconductor substrate;
- a PNP transistor having an N-type well for a base formed at the surface of said P-type semiconductor substrate;
- and
- a resistor element connected to an emitter of said PNP transistor and having an N-type well for a resistor at the surface of said P-type semiconductor substrate, said N-type well for a resistor being fabricated at the same time as when said N-type well for a base is fabricated.
1 more element
A reference voltage supply circuit comprising:
- an N-type semiconductor substrate;
- an NPN transistor, said NPN transistor including:
- a P-type well for a base formed at a surface of said N-type semiconductor substrate;
- an N-type diffused layer for an emitter electorde formed at a surface of said P-type well for a base;
- a P-type diffused layer for a base electrode formed at the surface of said P-type well for a base, an impurity concentration in said P-type diffused layer for a base electrode being higher than that in the P-type well for a base;
- and
- an N-type diffused layer for a collector electrode which is fabricated at the surface of said N-type semiconductor substrate at the same time as when said N-type diffused layer for an emitter electorde is fabricated;
- and
- a resistor element connected to an emitter of said NPN transistor, said resistor element including:
- a P-type well for a resistor which is fabricated at the surface of said N-type semiconductor substrate at the same time as when said P-type well for a base is fabricated;
- P-type diffused layers each for a resistor electrode which are fabricated at a surface of said P-type well for a resistor at the same time as when said P-type diffused layer for an emitter electrode is fabricated;
- and
- an N-type diffused layer for bias formed between said P-type diffused layers each for a resistor electrode.
10 more elements
Dependencies are inferred from the claim text.