Relaxed InGaAs buffers
AssigneeMassachusetts Institute of Technology
InventorsEugene A. Fitzgerald, Mayank T. Bulsara
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Abstract
InxGa1−xAs structures with compositionally graded buffers grown with organometallic vapor phase epitaxy (OMPVE) on GaAs substrates. A semiconductor structure and a method of processing such a structure including providing a substrate of GaAs; and epitaxially growing a relaxed graded layer of InxGa1−xAs at a temperature ranging upwards from about 600° C.
Claims18
An integrated circuit comprising a heterostructure for a 1.3 μm wavelength laser, said heterostructure comprising a GaAs substrate, a relaxed graded layer of InxGa1−xAs which is epitaxially grown on said substrate at a temperature ranging upwards from about 600° C., and semiconductor device layers.
An integrated circuit comprising a heterostructure for a field-effect transistor (FET), said heterostructure comprising a GaAs substrate, a relaxed graded layer of InxGa−xAs which is epitaxially grown on said substrate at a temperature ranging upwards from about 600° C., and an active layer.
Dependencies are inferred from the claim text.