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AssigneeMitsubishi Chemical Corporation
InventorsKenji Shimoyama, Kazumasa Kiyomi, Hideki Gotoh, Satoru Nagao
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The semiconductor device according to the present invention comprises a V-groove having V-shaped cross-section formed on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate, and an active layer is provided only at the bottom of said V-groove. The method for manufacturing a semiconductor device according to the present invention comprises the steps of forming a stripe-like etching protective film in <011> direction of a semiconductor substrate or an epitaxial growth layer grown on it, performing gas etching using hydrogen chloride as etching gas on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate to form a V-groove, and forming an active layer at the bottom of said V-groove.
A semiconductor device, comprising a V-groove having V-shaped cross-section on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate, and an active layer is provided only at the bottom of said V-groove.
A semiconductor device according to claims 18 to 20, wherein said first cladding layer and said first optical guiding layer are of the same first conductivity type, said third cladding layer and said second optical guiding layer are of the same second conductivity type, and said second cladding layer is of second conductivity type or has high resistance.
A method for manufacturing a semiconductor device, comprising the steps of forming a stripe-like etching protective film on a semiconductor substrate or on an
Dependencies are inferred from the claim text.