Film forming method and manufacturing method of semiconductor device
AssigneeCanon Sales Co., Inc.
InventorsKazuo Maeda, Noboru Tokumasu, Yuki Ishii, Toshiro Nishiyama
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Abstract
The present invention discloses a method for forming a flattened interlayer insulating film to cover the wiring layer or the like of a semiconductor IC device, and a manufacturing method of a semiconductor device. The film-forming method of the present invention comprises the steps of preparing deposition gas containing an inert gas, and a silicon and phosphorus-containing compound having III valance phosphorus in which oxygen is bonded to at least one of bonding hands of phosphorous, and forming a silicon containing insulating film 21 containing P2O3 on a substrate 101 by using said deposition gas.
Claims16
A film-forming method, comprising the steps of:
- preparing deposition gas containing an inert gas, and a silicon and phosphorus-containing compound having III valance phosphorus in which oxygen is bonded to at least one of bonding hands of phosphorous;
- and
- forming a silicon containing insulating film containing P2O3 on a substrate by using said deposition gas.
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a wiring layer on an insulating film;
- preparing deposition gas containing an inert gas, and a silicon and phosphorus-containing compound having III valance phosphorus in which oxygen is bonded to at least one of bonding hands of phosphorous;
- and
- forming a flattened silicon containing insulating film containing P2O3 and covering said wiring layer by using said deposition gas.
Dependencies are inferred from the claim text.