Apparatus and methods for integrated circuit planarization
OwnerJoseph A. Levert, Daniel Lynne Towery +1inventors
InventorsJoseph A. Levert, Daniel Lynne Towery, Denis Endisch
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Abstract
An apparatus for planarizing or patterning a dielectric film on a substrate is provided. The apparatus includes a press for applying contact pressure to an operably connected compression tool. The compression tool has a working face that is planar or patterned. A controller for regulating the position, timing and force applied by the compression tool to the dielectric film is also provided. There is also provided a support, with an optional workpiece holder for supporting the substrate and dielectric film during contact with the compression tool. Methods of using the apparatus, as well as planarized and/or patterned dielectric films are also provided.
Claims25
An apparatus for planarizing or patterning a dielectric film on a substrate comprising,
- (a) a press for applying contact pressure to a compression tool,
- (b) a compression tool having a working face that is planar or patterned, wherein said compression tool is operably connected to said press,
- (c) a controller for regulating the position, timing and force applied to said dielectric film by said press,
- (d) a support positioned adjacent said substrate and opposite from the film to be contacted with the compression tool.
The apparatus of claim I wherein said press is selected from the group consisting of an arbor press, a hydraulic press, a pneumatic press, a moving cross-head press and combinations thereof.
A compression tool comprising at least one vent for releasing vapors or gases trapped during compression, said vent comprising at least one opening on the working surface of said compression tool, where said opening connects to a conduit through said compression tool, said conduit connecting to atmosphere or to a gas or vapor collection system.
A planarized or patterned dielectric silica coating on a substrate formed by a process comprising:
- applying a composition that comprises a silicon-based precursor onto a substrate to form a coating on said substrate, and conducting the following steps:
- (a) gelling or aging the applied coating,
- (b) contacting the coating with a planarization object with sufficient pressure to transfer an impression of the object to the coating without substantially impairing formation of desired nanometer-scale pore structure,
- (c) separating the planarized coating from the planarization object,
- (d) curing said planarized coating;
- wherein steps (a)-(d) are conducted in a sequence selected from the group consisting of
- (a), (b), (c) and (d);
- (a), (d), (b) and (c);
- (b), (a), (d) and (c);
- (b), (a), (c) and (d);
- and
- (b), (c), (a) and (d).
Dependencies are inferred from the claim text.