US 2001/0036737 A1 · Semiconductor device formed with metal wiring on a wafer by chemical mechanical polishing, and method of manufacturing the same

Abstract

An insulating layer is formed on a whole surface of a wafer. Recesses such as wiring grooves are formed in the insulating layer. A part of the insulating layer is removed on a region whose distance from the peripheral edge of the wafer is a value x or less. After a conductive film is formed on the whole wafer surface, a part is removed on a region whose distance from the peripheral wafer edge is a value y (y<x) or less. Chemical mechanical polishing removes a part of the conductive except in the recesses. Thereafter, wet etching removes part of the conductive film on a region from the peripheral wafer edge of z (x<z) or less. An interlayer insulating film is formed on the whole wafer surface.

Claims14

Dependent claims

A method of manufacturing a semiconductor device, comprising the steps of:

forming at least one insulating layer on a whole surface of a wafer;
forming a plurality of recesses in said insulating layer, and then removing a part of said insulating layer on a region whose distance from a peripheral edge of said wafer is a predetermined value x or less;
forming a conductive film on a whole surface of said wafer, and thereafter removing a part of said conductive film on a region whose distance from said peripheral edge of said wafer is a predetermined value y (y<x) or less;
polishing chemically and mechanically to remove a part of said conductive film on a region except the recesses;
removing a part of said conductive film on a region whose distance from said peripheral edge of said wafer is a predetermined value z (x<z) or less;
and
forming an interlayer insulating film on the whole surface of said wafer.

4 more elements

A method of manufacturing a semiconductor device, comprising the steps of:

forming a silicon oxide film on a peripheral region of a surface of a wafer whose distance from a peripheral edge of said wafer is a predetermined value d or less, and forming a low permittivity film having a lower permittivity than that of said silicon oxide film, on the region of said wafer surface which is other than said peripheral region;
forming a plurality of recesses in said silicon oxide film and said low permittivity film, and removing a part of said silicon oxide film on a region whose distance from said peripheral edge of said wafer is a predetermined value x (x<d) or less;
forming a conductive film on a whole surface of said wafer, and thereafter removing a part of said conductive film on a region whose distance from said peripheral edge of said wafer is a predetermined value z (x<z<d) or less;
and
forming an interlayer insulating film on said conductive film.

2 more elements

A method of manufacturing a semiconductor device, comprising the steps of:

forming a silicon oxide film on a peripheral region of a surface of a wafer whose distance from a peripheral edge of said wafer is a predetermined value d or less, and forming a low permittivity film having a lower permittivity than that of said silicon oxide film on the region of said wafer surface which is other than said peripheral region;
forming a plurality of recesses in said silicon oxide film and said low permittivity film, and removing a part of said silicon oxide film on a region whose distance from said peripheral edge of said wafer is a predetermined value x (x<d) or less;
forming a conductive film on a whole surface of said wafer, and thereafter removing a part of said conductive film on a region whose distance from said peripheral edge of said wafer is a predetermined value y (y<x) or less;
polishing chemically and mechanically to remove a part of said conductive film on a region except said recesses;
removing a part of said conductive film on a region whose distance from said peripheral edge of said wafer is a predetermined value z (x<z<d) or less;
and
forming an interlayer insulating film on the whole surface of said wafer.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor device formed with metal wiring on a wafer by chemical mechanical polishing, and method of manufacturing the same

Life of this patent

Semiconductor device formed with metal wiring on a wafer by chemical mechanical polishing, and method of manufacturing the same

Life of this patent

Abstract

Claims14