Method of manufacturing semiconductor device having minute gate electrodes

A method of manufacturing a semiconductor device comprising:

• preparing a semiconductor substrate;
• forming an insulating layer on said semiconductor substrate;
• forming a conductive layer on said insulating layer;
• forming a photoresist layer on said conductive layer;
• patterning said photoresist layer to form photoresist patterns;
• shrinking said photoresist patterns, by using a mixed gas including chlorine and oxygen as an etching gas, thereby shrunk mask patterns are formed which are composed of shrunk patterns of said photoresist patterns and have mask sizes smaller than those of said photoresist patterns before being shrunk;
• and
• etching and patterning said conductive layer by using a layer of said shrunk mask patterns as an etching mask.

A method of manufacturing a semiconductor device comprising:

• preparing a semiconductor substrate;
• forming a first layer on said semiconductor substrate;
• forming a second layer on said first layer, wherein said first and second layers have different etching rates;
• forming a third mask pattern layer having predetermined patterns on said second layer;
• etching said second layer while shrinking said third mask pattern layer, by using an etching gas which can etch both said second layer and said third mask pattern layer, wherein said second layer is etched and patterned by using said third mask pattern layer having mask patterns which are shrinking as an etching mask, thereby shrunk mask patterns are formed which are composed of shrunk patterns of said third mask pattern layer and have mask sizes smaller than those of mask patterns of said third mask pattern layer before being shrunk;
• and
• etching and patterning said first layer by using said shrunk mask patterns and said patterned second layer as an etching mask.