US 2001/0036726 A1 · SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract

A semiconductor device manufactured by cleaning without dissolving W, Ti, or TiN even if these metallic materials are exposed on the substrates to be cleaned, and a method for manufacturing such a semiconductor device. Impurities present on a silicon substrate can be removed while controlling the etching of a tungsten film exposed on the surface of a silicon substrate, by dipping and cleaning the silicon substrate in one or a plurality of chemical solutions selected from a group consisting of HF, HCl, and NH4OH, under the condition that the surface of the silicon substrate is entirely covered with a tungsten film. After dry etching for patterning the tungsten film and the barrier metal, impurities present on a silicon substrate can be removed while controlling the etching of the tungsten film and the barrier metal exposed on the surface of a silicon substrate, by dipping and cleaning the silicon substrate in one or a plurality of chemical solutions selected from a group consisting of HCl and NH4OH.

Claims20

Dependent claims

A method of manufacturing a semiconductor device, comprising the steps of:

forming an interlayer insulation film on a silicon substrate;
depositing a barrier metal on said interlayer insulation film;
depositing a tungsten film on said barrier metal;
cleaning said silicon substrate by dipping said silicon substrate in a solution of at least one selected from a group consisting of HF, HCl, and NH4OH;
forming a photoresist pattern on said tungsten film;
and
patterning said tungsten film and said barrier metal using said photoresist pattern as a mask.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method of manufacturing the same

Life of this patent

Semiconductor device and method of manufacturing the same

Life of this patent

Abstract

Claims20