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US 2001/0036697 A1Published application
Method of fabricating semiconductor laser diode
AssigneeOki Electric Industry Co., Ltd.
InventorsYukio Katoh, Hiroshi Wada, Keizo Takemasa
Life of this patent
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Abstract
A method of fabricating a semiconductor laser diode includes forming a mask layer on a semiconductor substrate and forming a ridge waveguide structure including an active layer on the semiconductor substrate by selective growth method using the mask layer. The mask layer is formed to be along a direction with an angle to [011] direction of the semiconductor substrate.
Claims5
A method of fabricating a semiconductor laser diode, comprising:
- forming a mask layer on a semiconductor substrate, said mask layer is along a direction with an angle to [011] direction of said semiconductor substrate;
- and
- forming a ridge waveguide structure including an active layer on said semiconductor substrate by selective growth method using said mask layer.
A method of fabricating a semiconductor laser diode, comprising:
- forming a pair of strip-shaped mask layers on a semiconductor substrate, said mask layers are along a direction with an angle to [011] direction of said semiconductor substrate;
- and
- forming a ridge waveguide structure including an active layer on said semiconductor substrate by selective growth method using said mask layers.
Dependencies are inferred from the claim text.