Lateral patterning
OwnerK. Paul Muller, Hon-Sum P. Wonginventors
Life of this patent
Estimating the term…
Abstract
A method and structure for forming an integrated circuit chip having at least one opening in a substrate includes forming an opening having vertical walls in the substrate, protecting a first portion of the vertical walls of the opening, leaving a second portion of the vertical walls unprotected, and laterally patterning the second portion of the opening to change a shape or property of the opening.
Claims26
A method of forming an integrated circuit chip having at least one opening in a substrate, said method comprising:
- forming an opening having vertical walls in said substrate;
- protecting a first portion of said vertical walls of said opening, leaving a second portion of said vertical walls unprotected;
- and
- laterally patterning said second portion of said opening to change a property of said opening.
A method of forming an integrated circuit chip having at least one opening in a substrate, said method comprising:
- forming an opening having vertical walls in said substrate;
- protecting a first portion of said vertical walls of said opening, leaving a second portion of said vertical walls unprotected;
- and
- laterally patterning said second portion of said opening to form a step in said opening.
A method of forming an integrated circuit chip having at least one transistor, said method comprising:
- forming an opening having vertical walls in a semiconductor substrate;
- protecting a first portion of said vertical walls of said opening, leaving a second portion of said vertical walls unprotected;
- laterally patterning said second portion of said opening to form a step in said opening;
- and
- doping selected portions of said step to form two conductive regions separated by a semiconductive region, wherein in the presence of an adjacent voltage field, said semiconductive region changes its conductivity and performs a switching operation in combination with said conductive regions.
The method in claim I 1, wherein said first portion comprises a lower portion of said opening.
A method of forming an integrated circuit chip having at least one opening in a substrate, said method comprising:
- forming an opening having vertical walls in said substrate;
- protecting first portions of said vertical walls of said opening, leaving second portions of said vertical walls unprotected, wherein said first portions alternate with said second portions;
- and
- laterally patterning said second portions of said opening to change a property of said opening.
An integrated circuit having at least one trench capacitor, said trench capacitor comprising:
- an opening having vertical sides, said vertical sides including a plurality of lateral openings;
- an insulator lining said opening;
- and
- a conductor filling said opening.
Dependencies are inferred from the claim text.