Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film comprising silicon over a substrate;
• irradiating said semiconductor film with laser light in air for crystallizing said semiconductor film;
• removing an oxide film from a surface of the semiconductor film by etching after the irradiation of the laser light;
• and
• leveling the surface of the semiconductor film by heating in a reducing atmosphere after removing said oxide film.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film comprising silicon over a substrate;
• irradiating said semiconductor film with laser light in air for crystallizing said semiconductor film;
• removing an oxide film from a surface of the semiconductor film by etching after the irradiation of the laser light;
• and
• leveling the surface of the semiconductor film by heating in an inert gas after removing said oxide film.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film comprising silicon over a substrate;
• irradiating said semiconductor film with laser light in air for crystallizing said semiconductor film;
• removing an oxide film from a surface of the semiconductor film by etching after the irradiation of the laser light;
• and
• leveling the surface of the semiconductor film by heating in an atmosphere after removing said oxide film, a concentration of oxygen or a oxygen compound contained in said atmosphere is 10 ppm or less.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film comprising silicon over a substrate;
• irradiating said semiconductor film with laser light in air for crystallizing said semiconductor film;
• removing an oxide film from a surface of the semiconductor film by etching after the irradiation of the laser light;
• and
• leveling the surface of the semiconductor film by heating in a reducing atmosphere after removing said oxide film, a concentration of oxygen or a oxygen compound contained in said reducing atmosphere is 10 ppm or less.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film comprising silicon over a substrate;
• irradiating said semiconductor film with laser light in air for crystallizing said semiconductor film;
• removing an oxide film from a surface of the semiconductor film by etching after the irradiation of the laser light;
• and
• leveling the surface of the semiconductor film by heating in an inert gas after removing said oxide film, a concentration of oxygen or a oxygen compound contained in said inert gas is 10 ppm or less.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film comprising silicon over a substrate;
• irradiating said semiconductor film with laser light in air for crystallizing said semiconductor film;
• treating a surface of the semiconductor film with a hydrofluoric acid after the irradiation of the laser light;
• and
• leveling the surface of the semiconductor film by heating after the treatment with said hydrofluoric acid.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film comprising silicon over a substrate;
• irradiating said semiconductor film with laser light in air for crystallizing said semiconductor film;
• treating a surface of the semiconductor film with a hydrofluoric acid after the irradiation of the laser light;
• and
• leveling the surface of the semiconductor film by heating after the treatment with said hydrofluoric acid in a reducing atmosphere.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film comprising silicon over a substrate;
• irradiating said semiconductor film with laser light in air for crystallizing said semiconductor film;
• treating a surface of the semiconductor film with a hydrofluoric acid after the irradiation of the laser light;
• and
• leveling the surface of the semiconductor film by heating after the treatment with said hydrofluoric acid in an inert gas.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film comprising silicon over a substrate;
• irradiating said semiconductor film with laser light in air for crystallizing said semiconductor film;
• treating a surface of the semiconductor film with a hydrofluoric acid after the irradiation of the laser light;
• and
• leveling the surface of the semiconductor film by heating after the treatment with said hydrofluoric acid in an atmosphere, a concentration of oxygen or a oxygen compound contained in said atmosphere is 10 ppm or less.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film comprising silicon over a substrate;
• irradiating said semiconductor film with laser light in air for crystallizing said semiconductor film;
• treating a surface of the semiconductor film with a hydrofluoric acid after the irradiation of the laser light;
• and
• leveling the surface of the semiconductor film by heating after the treatment with said hydrofluoric acid in a reducing atmosphere, a concentration of oxygen or a oxygen compound contained in said reducing atmosphere is 10 ppm or less.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film comprising silicon over a substrate;
• irradiating said semiconductor film with laser light in air for crystallizing said semiconductor film;
• treating a surface of the semiconductor film with a hydrofluoric acid after the irradiation of the laser light;
• and
• leveling the surface of the semiconductor film by heating after the treatment with said hydrofluoric acid in an inert gas, a concentration of oxygen or a oxygen compound contained in said inert gas is 10 ppm or less.