Method of manufacturing thin film transistor panel having protective film of channel region
AssigneeCasio Computer Co., Ltd.
InventorsToshiaki Higashi, Tatsuya Miyakawa
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Abstract
A protective film for protecting the channel region of a thin film transistor is formed by a dry etching treatment. Therefore, even if there is a defect in a semiconductor film, pin holes are not formed in a gate insulating film. It follows that the breakdown voltage of the gate insulating film is not lowered even if a scanning signal line, etc. including a gate electrode is formed of only an A-based metal film having an anodic oxide film not formed on the surface.
Claims19
A method of manufacturing a thin film transistor panel, comprising the steps of:
- forming a scanning signal line including a connection pad and a gate electrode section, the entire region of which including the surface being formed of a conductive metal film, on a substrate;
- forming a gate insulating film on said substrate and said scanning signal line;
- forming a semiconductor film on said gate insulating film;
- forming a protective film-forming film on said semiconductor film;
- patterning said protective film-forming film by a dry etching so as to form a protective film in that region of said semiconductor film which corresponds to said gate electrode section;
- forming a drain electrode connected to one region of said semiconductor film exposed to the outside from both sides of said protective film and forming a source electrode connected to the other region;
- forming an upper insulating film to cover the drain electrode, the source electrode and the gate insulating film;
- and
- forming a transparent electrode connected to said source electrode on said upper insulating film.
A method of manufacturing a thin film transistor panel, comprising the steps of:
- forming a scanning signal line including a scanning electrode terminal and a gate electrode on a substrate;
- forming a gate insulating film on said substrate and on said scanning signal line;
- forming a semiconductor film, in which a channel region, a source region and a drain region are formed, on said gate insulating film;
- forming a protective film-forming film on said semiconductor film;
- patterning said protective film-forming film by a dry etching method so as to form a protective film in the region in which said channel region is formed;
- forming a source electrode connected to that region of said semiconductor film in which a drain region is to be formed and forming a data signal line including a drain electrode connected to the region in which a drain region is to be formed and a data electrode terminal, said data signal line having a redox potential higher than that of said scanning signal line;
- forming an upper insulating film to cover said drain electrode, said source electrode and said gate insulating film, said upper insulating film having contact holes partly exposing said source electrode, said data electrode terminal and said scanning electrode terminal to the outside;
- and
- forming a transparent electrode on said upper insulating film, said transparent electrode being connected to a transparent conductive film covering said data electrode terminal and to said source electrode.
Dependencies are inferred from the claim text.