Magnetic memory with structures that prevent disruptions to magnetization in sense layers
AssigneeHewlett-Packard Company
InventorThomas C. Anthony
Life of this patent
Estimating the term…
Abstract
A magnetic memory cell is disclosed having a structure that prevents disruptions to the magnetization in the sense layer of the magnetic memory cell. In one embodiment, the structure includes a high permeability magnetic film that serves as a keeper for the sense layer magnetization. The keeper structure provides a flux closure path that directs demagnetization fields away from the sense layer. In another embodiment, the structure contains a hard ferromagnetic film that applies a local magnetic field to the sense layer in the magnetic memory cell.
Claims22
A magnetic memory cell, comprising:
- sense layer for storing a magnetization state that indicates a logic state of the magnetic memory cell;
- structure that prevents disruptions to the magnetization state in the sense layer.
A magnetic memory cell, comprising:
- sense layer for storing a magnetization that indicates a logic state of the magnetic memory cell;
- means for providing flux closure for one or more demagnetization fields in the magnetic memory cell.
A method for forming a magnetic memory with a set of structures, comprising the steps of:
- forming a set of trenches in a substrate;
- depositing a layer of magnetic material for the structures so that the magnetic material coats horizontal and vertical surfaces of the trenches and the substrate;
- depositing a layer of conductor material on the layer of magnetic material to fill the trenches;
- polishing the layer of conductor material and the layer of magnetic material to expose an upper surface of the substrate.
Dependencies are inferred from the claim text.