Photomask and pattern forming method employing the same

A method of forming a pattern, comprising the steps of:

• forming a photoresist film on a substrate;
• placing said substrate having said photoresist film on a sample stage of an aligner;
• exposing a predetermined first area of said substrate by using a photomask including a semitransparent phase shifting area which has a semitransparent area and a transparent area, which are respectively transparent and semitransparent with respect to exposure light beams, and in which light beams having passed through said semitransparent area is substantially 180 degrees out of phase with respect to light beams having passed through said transparent area, and a pattern which is formed in said photomask and in which a semitransparent phase shifting pattern and a transparent pattern are arranged in a repeated pitch equal to or smaller than the critical resolution of a projection exposure optical system;
• moving horizontally said substrate;
• and
• exposing a second area of said substrate which is adjacent to said predetermined first area by using said photomask.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming diffusion layers in a surface of a semiconductor substrate;
• forming an insulating film on said semiconductor substrate having said diffusion layers;
• forming opening portions through a photoresist film on said diffusion layers by a pattern forming method, said pattern forming method including the steps of:
• forming said photoresist film on said insulating film;
• placing said substrate having said photoresist film on a sample stage of an aligner;
• exposing a predetermined first area of said substrate by using a photomask including a semitransparent phase shifting area which has a semitransparent area and a transparent area, which are respectively transparent and semitransparent with respect to exposure light beams, and in which light beams having passed through said semitransparent area is substantially 180 degrees out of phase with light beams having passed through said transparent area, and a pattern which is formed in said photomask and in which a semitransparent phase shifting pattern and a transparent pattern are arranged in a repeated pitch equal to or smaller than the critical resolution of a projection exposure optical system;
• moving horizontally said substrate;
• and exposing a second area of said substrate which is adjacent to said predetermined first area by using said photomask;
• etching selectively said insulating film with said photoresist film having said opening portions as a mask to expose said diffusion layers;
• and
• forming a wiring layer, which is electrically connected to said diffusion layers, on said insulating film.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a first insulating film on a substrate;
• forming a first wiring layer on said first insulating layer;
• forming a second insulating film on said substrate having said first wiring layer;
• forming opening portions through a photoresist film on said first wiring layer by a pattern forming method, said pattern forming method including the steps of:
• forming said photoresist film on said second insulating film;
• placing said substrate having said photoresist film on a sample stage of an aligner;
• exposing a predetermined first area of said substrate by using a photomask including a semitransparent phase shifting area which has a semitransparent area and a transparent area, which are respectively transparent and semitransparent with respect to exposure light beams, and in which light beams having passed through said semitransparent area is substantially 180 degrees out of phase with respect to light beams having passed through said transparent area, and a pattern which is formed in said photomask and in which a semitransparent phase shifting pattern and a transparent pattern are arranged in a repeated pitch equal to or smaller than the critical resolution of a projection exposure optical system;
• moving horizontally said substrate;
• and exposing a second area of said substrate which is adjacent to said predetermined first area by using said photomask;
• etching selectively said second insulating film with said photoresist film having said opening portions as a mask to expose said first wiring layer;
• and
• forming a second wiring layer, which is electrically connected to said first wiring layer, on said second insulating film.