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US 2001/0034115 A1Published application
Method for forming p-type semiconductor film and light emitting device using the same
AssigneeMurata Manufacturing Co., Ltd.
InventorsMichio Kadota, Yasuhiro Negoro, Toshinori Miura
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Abstract
A method for forming a p-type semiconductor film comprises the steps of: providing on a substrate a group II-VI compound semiconductor film which is doped with a p-type impurity and comprises either MgxZn1-xO (0≦X≦1) or CdxZn1-xO (0≦X≦1) and activating the p-type impurity by annealing the doped semiconductor film.
Claims11
A method for forming a p-type semiconductor film comprising the steps of:
- providing on a substrate a group II-VI compound semiconductor film which is doped with a p-type impurity and comprises ZnO;
- and
- activating the p-type impurity by annealing the doped semiconductor film.
A method for forming a p-type semiconductor film comprising the steps of:
- providing on a substrate a group II-VI compound semiconductor film which is doped with a p-type impurity and comprises either MgxZn1-xO (0≦X≦1) or CdxZn1-xO (0≦X≦1);
- and
- activating the p-type impurity by annealing the doped semiconductor film.
Dependencies are inferred from the claim text.