Method of manufacturing a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hisashi Ohtani, Hideto Ohnuma
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Abstract
There is provided a method of manufacturing a semiconductor device having a TFT with sufficient characteristics and little fluctuation by accurately controlling the addition amount of impurity ions to the semiconductor layer using an ion doping device. A semiconductor device having a TFT showing sufficient and stable characteristics may be obtained by increasing the ratio of the dopant amount in the doping gas and decreasing the ambient atmosphere components (C, N, O) and hydrogen to be simultaneously added with the impurity ions at the time of doping.
Claims14
A method of manufacturing a semiconductor device comprising the step of:
- ion-doping an impurity element into a semiconductor film,
- wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film,
- wherein a concentration of said impurity element is in the range from 1×1015 to 5×1017 atoms/cm3 in said semiconductor film after the step, and
- wherein a concentration of carbon is at 3×1017 atoms/cm3 or less in said semiconductor film after the step.
A method of manufacturing a semiconductor device comprising the step of:
- ion-doping an impurity element into a semiconductor film,
- wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film,
- wherein a concentration of said impurity element is in the range from 1×1015 to 5×1017 atoms/cm3 in said semiconductor film after the step, and
- wherein a concentration of nitrogen is at 1×1017 atoms/cm3 or less in said semiconductor film after the step.
A method of manufacturing a semiconductor device comprising the step of:
- ion-doping an impurity element into a semiconductor film,
- wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film,
- wherein a concentration of said impurity element is in the range from 1×1015 to 5×1017 atoms/cm3 in said semiconductor film after the step, and
- wherein a concentration of oxygen is at 3×1017 atoms/cm3 or less in said semiconductor film after the step.
A method of manufacturing a semiconductor device comprising the step of:
- ion-doping an impurity element into a semiconductor film,
- wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film,
- wherein a concentration of said impurity element is in the range from 1×1015 to 5×1017 atoms/cm3 in said semiconductor film after the step, and
- wherein a concentration of hydrogen is at 1×1019 atoms/cm3 or less in said semiconductor film after the step.
A method of manufacturing a semiconductor device comprising the step of:
- ion-doping an impurity element into a semiconductor film,
- wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film,
- wherein a concentration of said impurity element is in the range from 1×1015 to 5×1017 atoms/cm3 in said semiconductor film after the step, and
- wherein said impurity element is doped into said semiconductor film by using a source material gas containing said impurity element diluted with hydrogen to the concentration in the range from 0.5% to 5%.
Dependencies are inferred from the claim text.