Method of fabricating semiconductor device having ferroelectric capacitor

Abstract

An interlayer insulating film, contacts, and wirings are formed on a MOS transistor formed on a silicon substrate. Another interlayer insulating film and contacts are formed thereon. Subsequently, as a first heat treatment, a heat treatment is performed in a hydrogen atmosphere or a nitrogen- or otherwise-diluted hydrogen atmosphere at a temperature of the order of 300-500° C. for about 5-60 minutes, thereby recovering defects that occur in the MOS transistor and insulating film forming steps and the like. Then, a ferroelectric capacitor connected to either diffusion layer of the MOS transistor is formed along with wirings, electrodes, and the like. Thereafter, as a second heat treatment, a heat treatment is performed in nitrogen at a temperature of the order of 300-500° C. for about 5-60 minutes. This recovers defects that occur after the first heat treatment step.

Dependencies are inferred from the claim text.