Tunnel magnetoresistive effective element, a thin film magnetic head, a magnetic head device and a magnetic disk drive device
AssigneeTDK Corporation
InventorsKoji Shimazawa, Tsuyoshi Umehara
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Abstract
A tunnel magnetoresistive effective element has a ferromagnetic tunnel effective film with a free layer, a pinned layer and a tunnel barrier layer sandwiched between the free layer and the pinned layer, a magnetic bias means, a first conductive layer, and a second conductive layer. The magnetic bias means apply a bias magnetic field to the free layer of the ferromagnetic tunnel effective film. The first conductive layer and the second conductive layer generate magnetic fields having the same direction as that of the bias magnetic field through a sense current therein to reinforce the bias magnetic field.
Claims17
A tunnel magnetoresistive effective element comprising a ferromagnetic tunnel effective film, a magnetic bias means, a first conductive layer, and a second conductive layer
- the ferromagnetic tunnel effective film has a free layer, a pinned layer and a tunnel barrier layer sandwiched between the free layer and the pinned layer,
- the magnetic bias means applying a bias magnetic field to the free layer,
- the first conductive layer being formed on one surface of the ferromagnetic tunnel effective film so as to be electrically conducted to the ferromagnetic tunnel effective film,
- the second conductive layer being formed on the other surface of the ferromagnetic tunnel effective film so as to be electrically conducted to the ferromagnetic tunnel effective film,
- at least one of the first conductive layer and the second conductive layer generating a magnetic field having the same direction as that of the bias magnetic field through a sense current therein.
Dependencies are inferred from the claim text.