Magnetoresistance-effect element, magnetoresistance-effect magnetic head, and method of manufacturing a magnetoresistance-effect element
AssigneeSony Corporation
InventorTetsuya Mizuguchi
Life of this patent
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Abstract
A magnetoresistance-effect element comprising a magnetism-sensing layer 9, a low-resistance metal layer 10 and an oxide layer 11. The magnetism-sensing layer 9 has its electric resistance changed in accordance with an external magnetic field. The low-resistance metal layer 9 is formed in contact with the magnetism-sensing layer 9. The oxide layer 11 is provided on that surface of the metal layer 10 which faces away from the magnetism-sensing layer 9.
Claims28
A magnetoresistance-effect element comprising:
- a magnetism-sensing section the electric resistance of which changes in accordance with an external magnetic field;
- a low-resistance metal layer contacting the magnetism-sensing section;
- and
- an oxide layer provided on that surface of the low-resistance metal layer which faces away from the magnetism-sensing section.
A magnetoresistance-effect magnetic head comprising:
- a substrate;
- a pair of magnetic shield members provided on the substrate;
- a magnetoresistance-effect element interposed between the magnetic shield members;
- a pair of bias layers provided at the ends of longitudinal direction of the magnetoresistance-effect element;
- and
- a pair of lead electrodes provided in the form of thin film and arranged right above the bias layers,
- wherein the magnetoresistance-effect element comprises a magnetism-sensing section the electric resistance of which changes in accordance with an external magnetic field, a low-resistance metal layer contacting the magnetism-sensing section, and an oxide layer provided on that surface of the low-resistance metal layer which faces away from the magnetism-sensing section.
A method of manufacturing a magnetoresistance-effect element having a magnetism-sensing section the electric resistance of which changes in accordance with an external magnetic field, said method comprising:
- a first step of forming the magnetism-sensing section and a low-resistance metal layer on a substrate, in the order mentioned;
- and
- a second step of forming an oxide layer by oxidizing that surface of the low-resistance metal layer which faces away from the magnetism-sensing section.
A method of manufacturing a magnetoresistance-effect element having a magnetism-sensing section the electric resistance of which changes in accordance with an external magnetic field, said method comprising:
- a first step of forming a low-resistance metal layer and the magnetism-sensing section on a substrate, in the order mentioned;
- and
- a second step of forming an oxide layer by oxidizing that surface of the low-resistance metal layer which faces away from the magnetism-sensing section.
Dependencies are inferred from the claim text.