Thin-film magnetic head having magnetic resistance effect element
AssigneeAlps Electric Co., Ltd.
InventorKiyoshi Sato
Life of this patent
Estimating the term…
Abstract
According as the gap layer formed between the magnetoresistive effect element and the shielding layer becomes smaller along with the recent tendency toward a higher recording density, the electrode layer of the magnetoresistive effect element and the shielding layer have been electrically connected, and this has caused a deterioration of the reproduction property. An insulating layer is formed under an electrode layer of a magnetoresistive effect element interposed a lower gap layer therebetween. As a result, the distance between the electrode layer and the lower shielding layer becomes longer, thus permitting maintenance of a satisfactory electrical insulation.
Claims19
A thin-film magnetic head comprising a lower shielding layer and a lower gap layer formed thereon, a magnetresistive element comprising a multilayer film displaying magnetoresistive effect and formed on said lower gap layer and an electrode layer connected to said multilayer film, and an upper shielding layer formed on said magnetoresistive effect element interposed the upper gap layer therebetween;
- wherein an insulating layer is formed in addition to the lower gap layer between said electrode layer and the lower shielding layer.
A thin-film magnetic head comprising a lower shielding layer and a lower gap layer formed thereon, a magnetoresistive effect element comprising a multilayer film displaying a magnetoresistive effect and formed on said lower gap layer and an electrode layer connected to said multilayer film, and an upper shielding layer formed on said magnetoresistive effect element interposed the upper gap layer therebetween;
- wherein an insulating layer is formed in addition to the upper gap layer between said electrode layer and said upper shielding layer.
Dependencies are inferred from the claim text.