Microstrip line, method for fabricating the same, inductor element, and RF semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorMitsuru Tanabe
Life of this patent
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Abstract
A microstrip line includes a ground conductor layer, a dielectric layer formed on the ground conductor layer, and a linear conductor layer formed on the dielectric layer to have a linear configuration. The linear conductor layer has a wider portion in the upper part of a cross section thereof taken in a direction perpendicular to the direction in which the linear conductor layer extends and a narrower portion in the lower part of the cross section. The narrower portion is smaller in width than the wider portion.
Claims7
A microstrip line comprising:
- a ground conductor layer;
- a dielectric layer formed on the ground conductor layer;
- and
- a linear conductor layer formed on the dielectric layer to have a linear configuration, the linear conductor layer having a wider portion in an upper part of a cross section thereof taken in a direction perpendicular to a direction in which the linear conductor layer extends and a narrower portion in a lower part of the cross section, the narrower portion being smaller in width than the wider portion.
A method for fabricating a microstrip line, the method comprising the steps of:
- forming a ground conductor layer on a substrate composed of a dielectric material;
- forming a dielectric layer on the ground conductor layer;
- forming a mask pattern having a linear opening on the dielectric layer;
- depositing a layer forming a linear conductor layer on the mask pattern including the opening;
- and
- patterning the linear-conductor-layer forming layer such that the linear-conductor-layer forming layer on the mask pattern has a width larger than a width of the opening.
An inductor element comprising a microstrip line composed of a ground conductor layer, a dielectric layer formed on the ground conductor layer, and a linear conductor layer formed on the dielectric layer to have a linear configuration,
- the linear conductor layer being formed in a spiral configuration in a plane parallel to the dielectric layer and having a wider portion in an upper part of a cross section thereof taken in a direction perpendicular to a direction in which the linear conductor layer extends and a narrower portion in a lower part of the cross section, the narrower portion being smaller in width than the wider portion.
An RF semiconductor device comprising:
- an active element formed in a substrate;
- and
- a microstrip line formed on the substrate to propagate input/output signals to and from the active element,
- the microstrip line being composed of a ground conductor layer formed on the substrate, a dielectric layer formed on the ground conductor layer, and a linear conductor layer formed on the dielectric layer to have a linear configuration,
- the linear conductor layer having a wider portion in an upper part of a cross section thereof taken in a direction perpendicular to a direction in which the linear conductor layer extends and a narrower portion in a lower part of the cross section, the narrower portion being smaller in width than the wider portion.
Dependencies are inferred from the claim text.