Semiconductor devices and methods for manufacturing the same
AssigneeSeiko Epson Corporation
InventorsKazumi Matsumoto, Yukio Morozumi, Michio Asahina
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Abstract
Certain embodiments of the present invention relate to a semiconductor device that has a pad section having an excellent coherency with an interlayer dielectric layer, and a method for manufacturing the same. A semiconductor device 1000 has a pad layer 30A formed over an interlayer dielectric layer 20. The interlayer dielectric layer 20 includes at least a first silicon oxide layer 20b that is formed by a polycondensation reaction of a silicon compound and hydrogen peroxide, and a second silicon oxide layer 20c formed over the first silicon oxide layer and containing an impurity. The pad section 30A includes a wetting layer 32, an alloy layer 34 and a metal wiring layer 37.
Claims21
A semiconductor device comprising:
- a pad section over an interlayer dielectric layer,
- wherein the interlayer dielectric layer includes a first silicon oxide layer that is formed by a polycondensation reaction of a silicon compound and hydrogen peroxide, and a second silicon oxide layer formed over the first silicon oxide layer and containing an impurity, and
- the pad section includes a wetting layer and a metal wiring layer.
A method for manufacturing a semiconductor device, comprising the steps of:
- (a) forming a interlayer dielectric layer, the step including:
- (a) (1) forming a first silicon oxide layer by reacting a silicon compound and hydrogen peroxide through a chemical vapor deposition method, and
- (a) (2) forming a second porous silicon oxide layer by reacting a silicon compound, at least one of oxygen and a compound including oxygen, and a compound including an impurity through a chemical vapor deposition method;
- (b) forming a wetting layer over the interlayer dielectric layer;
- (c) forming a metal wiring layer over the wetting layer;
- and
- (d) forming a pad section by patterning the wetting layer and the metal wiring layer.
A method for manufacturing a semiconductor device, comprising:
- forming a first silicon oxide layer using a polycondensation reaction of a silicon compound and hydrogen peroxide;
- forming a second silicon oxide layer including an impurity therein;
- and
- forming a pad section over the first silicon oxide layer and the second silicon oxide layer, the pad section including a wetting layer and a wiring layer.
Dependencies are inferred from the claim text.