Solid state imaging apparatus, method of manufacturing the same and video system using such solid state imaging apparatus

A method of manufacturing a solid state imaging apparatus characterized by comprising:

• a first step of forming for each unit cell a first impurity layer in a surface area of a substrate of a first conductivity type by implanting ions of an impurity of a first conductivity type into said substrate to an impurity concentration level higher than said substrate, using a silicon nitride film formed on the substrate as mask;
• a second step of forming a device separation region on said first impurity layer;
• a third step of forming a second impurity layer of a second conductivity type in a surface area of said substrate and a third impurity layer of the second conductivity type in another surface area of said substrate separated from said device separation region by a predetermined distance by implanting ions of an impurity of the second conductivity type different from said first conductivity type, using an electrode formed on said substrate and a resist layer formed on said substrate and said device separation region as mask;
• and
• a fourth step of forming a wiring layer on said second impurity layer after removing said resist layer.

A method of manufacturing a solid state imaging apparatus characterized by comprising:

• a first step of forming for each unit cell a first impurity layer in a surface area of a substrate of a first conductivity type by implanting ions of an impurity of a first conductivity type into said substrate to an impurity concentration level higher than said substrate, using a silicon nitride film formed on the substrate as mask;
• a second step of forming a device separation region on said first impurity layer;
• a third step of forming a second impurity layer of a second conductivity type in a surface area of said substrate and a third impurity layer of the second conductivity type in another surface area of said substrate adjacent to said device separation region by implanting ions of an impurity of the second conductivity type different from said first conductivity type, using an electrode formed on said substrate and a resist layer formed on said substrate and said device separation region as mask;
• a fourth step of forming a fourth impurity layer by implanting ions of said impurity of the first conductivity type into part of the surface area of said third impurity layer adjacent to said first impurity layer to an impurity concentration level higher than the first impurity layer, using the electrode formed on said substrate and the resist layer formed on said substrate and said device separation region as mask;
• and
• a fifth step of forming a wiring layer on said second impurity layer after removing said resist layer.

A method of manufacturing a solid state imaging apparatus characterized by comprising:

• a first step of forming for each unit cell a first impurity layer in a surface area of a substrate of a first conductivity type by implanting ions of an impurity of a first conductivity type into said substrate to an impurity concentration level higher than said substrate, using a silicon nitride film formed on the substrate as mask;
• a second step of forming a device separation region on said first impurity layer;
• a third step of forming a second impurity layer of a second conductivity type in a surface area of said substrate and a third impurity layer of the second conductivity type in another surface area of said substrate adjacent to said device separation region by implanting ions of an impurity of the second conductivity type different from said first conductivity type, using an electrode formed on said substrate and a resist layer formed on said substrate and said device separation region as mask;
• a fourth step of forming a fourth impurity layer by implanting ions of said impurity of the first conductivity type into a surface area of said third impurity layer to an impurity concentration level higher than the first impurity layer, using the electrode formed on said substrate and the resist layer formed on said substrate and said device separation region as mask;
• and
• a fifth step of forming a wiring layer on said second impurity layer after removing said resist layer.

A method of manufacturing a solid state imaging apparatus characterized by comprising:

• a first step of forming for each unit cell a first impurity layer in a surface area of a substrate of a first conductivity type by implanting ions of an impurity of a first conductivity type into said substrate to an impurity concentration level higher than said substrate, using a silicon nitride film formed on the substrate as mask;
• a second step of forming a device separation region on said first impurity layer;
• a third step of forming a second impurity layer of a second conductivity type in a surface area of said substrate and a third impurity layer of the second conductivity type in another surface area of said substrate separated from said device separation region by a predetermined distance by implanting ions of an impurity of the second conductivity type different from said first conductivity type, using an electrode formed on said substrate and a resist layer formed on said substrate and said device separation region as mask;
• a fourth step of forming a fourth impurity layer by implanting ions of said impurity of the first conductivity type into a surface area of said third impurity layer and a surface area of said substrate adjacent to said first impurity layer to an impurity concentration level higher than the first impurity layer, using the electrode formed on said substrate and the resist layer formed on said substrate and said device separation region as mask;
• and
• a fifth step of forming a wiring layer on said second impurity layer after removing said resist layer.

A method of manufacturing a solid state imaging apparatus characterized by comprising:

• a first step of forming for each unit cell a first impurity layer in a surface area of a substrate of a first conductivity type by implanting ions of an impurity of a first conductivity type into said substrate to an impurity concentration level higher than said substrate, using a silicon nitride film formed on the substrate as mask;
• a second step of forming a second impurity layer by implanting ions of the impurity of said first conductivity type into a surface area of said substrate adjacent to said first impurity layer to a concentration level higher than said first impurity layer, using said silicon nitride film and a resist layer formed on part of said first impurity layer as mask;
• a third step of forming a device separation region on said first impurity layer;
• a fourth step of forming a third impurity layer of a second conductivity type in a surface area of said substrate and a fourth impurity layer of the second conductivity type in another surface area of said substrate adjacent to said device separation region by implanting ions of an impurity of the second conductivity type different from said first conductivity type, using an electrode formed on said substrate and a resist layer formed on said substrate and said device separation region as mask;
• and
• a fifth step of forming a wiring layer on said second impurity layer after removing said resist layer.

A method of manufacturing a solid state imaging apparatus characterized by comprising:

• a first step of forming for each unit cell a first impurity layer in a surface area of a substrate of a first conductivity type by implanting ions of an impurity of a first conductivity type into said substrate to an impurity concentration level higher than said substrate, using a silicon nitride film formed on the substrate as mask;
• a second step of forming a device separation region on said first impurity layer;
• a third step of forming a second impurity layer of a second conductivity type in a surface area of said substrate and a third impurity layer of the second conductivity type in another surface area of said substrate separated from said device separation region by a predetermined distance by implanting ions of an impurity of the second conductivity type different from said first conductivity type, using an electrode formed on said substrate and a resist layer formed on said substrate and said device separation region as mask;
• a fourth step of forming a fourth impurity layer by implanting ions of said impurity of the first conductivity type into part of the surface area of said third impurity layer adjacent to said first impurity layer to an impurity concentration level higher than the first impurity layer, using said electrode and the resist layer formed on said substrate and said device separation region as mask;
• and
• a fifth step of forming a wiring layer on said second impurity layer after removing said resist layer.

A video system comprising:

• an optical system for taking an optical image of a scene and leading the optical image to a predetermined location;
• an imaging means comprising an array of pixels, each having at least a photodiode for a photoelectric conversion region, a device separation region for the device separation of the photodiode and means for amplifying the signal charges collected by said photodiode, for photoelectrically transforming the optical image led to said predetermined location into an electric signal representing the quantity of light of the optical image on a pixel by pixel basis;
• and
• signal processing means for storing the electric signal produced by the photoelectric transformation by said imaging means;
• characterized in that
• said imaging means comprises for each cell:
• a device separation region for the device separation of said photodiode, said device separation region being provided with a first impurity layer of a first conductivity type formed in a lower area thereof;
• and
• a second impurity layer of a second conductivity type different from said first conductivity type formed in a surface area of the substrate of the first conductivity type separated from said device separation region by a predetermined distance.

A video system comprising:

• an optical system for taking an optical image of a scene and leading the optical image to a predetermined location;
• an imaging means comprising an array of pixels, each having at least a photodiode for a photoelectric conversion region, a device separation region for the device separation of the photodiode and means for amplifying the signal charges collected by said photodiode, for photoelectrically transforming the optical image led to said predetermined location into an electric signal representing the quantity of light of the optical image on a pixel by pixel basis;
• and
• signal processing means for storing the electric signal produced by the photoelectric transformation by said imaging means;
• characterized in that
• said imaging means comprises for each cell:
• a device separation region for the device separation of said photodiode, said device separation region being provided with a first impurity layer of a first conductivity type formed in a lower area thereof;
• a second impurity layer of a second conductivity type different from said first conductivity type formed in a surface area of the substrate of the first conductivity type;
• and
• a third impurity layer of the first conductivity type formed at least in part of the surface area of said second impurity layer and having an impurity concentration higher than said first impurity layer.

A video system comprising:

• an optical system for taking an optical image of a scene and leading the optical image to a predetermined location;
• an imaging means comprising an array of pixels, each having at least a photodiode for a photoelectric conversion region, a device separation region for the device separation of the photodiode and means for amplifying the signal charges collected by said photodiode, for photoelectrically transforming the optical image led to said predetermined location into an electric signal representing the quantity of light of the optical image on a pixel by pixel basis;
• and
• signal processing means for storing the electric signal produced by the photoelectric transformation by said imaging means;
• characterized in that
• said imaging means comprises for each cell:
• a device separation region for the device separation of said photodiode, said device separation region being provided with a first impurity layer of a first conductivity type having an impurity concentration greater than said first impurity layer formed in a lower area thereof;
• and
• a third impurity layer of a second conductivity type different from said first conductivity type formed adjacently relative to said second impurity layer in a surface area of the substrate of the first conductivity type.