Nitride based semiconductor photo-luminescent device
AssigneeNEC Corporation
InventorsAtsushi Yamaguchi, Masaru Kuramoto, Masaaki Nido
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Abstract
The first present invention provides a nitride based semiconductor photo-luminescent device having an active layer having a quantum well structure, the active layer having both at least a high dislocation density region and at least a low dislocation density region lower in dislocation density than the high dislocation density region, wherein the low dislocation density region includes a current injection region into which a current is injected, and the active layer is less than 1×1018 m−3 in impurity concentration.
Claims55
A nitride based semiconductor photo-luminescent device having an active layer, said active layer having both at least a high dislocation density region and at least a low dislocation density region lower in dislocation density than said high dislocation density region,
- wherein said low dislocation density region includes a current injection region into which a current is injected, and said active layer is less than 1×1018 m−3 in impurity concentration.
A nitride based semiconductor photo-luminescent device having an active layer over an epitaxial lateral overgrowth substrate having a dielectric mask pattern with a window region, said active layer having both at least a high dislocation density region positioned over said window region and at least a low dislocation density region positioned over said dielectric mask pattern, and said low dislocation density region being lower in dislocation density than said high dislocation density region,
- wherein said low dislocation density region includes a current injection region into which a current is injected, and said active layer is less than 1×1018 m−3 in impurity concentration.
A nitride based semiconductor photo-luminescent device having an active layer over a mask-less epitaxial lateral overgrowth substrate having a stripe-shaped nitride based semiconductor pattern with a window region, said active layer having both at least a high dislocation density region positioned over said stripe-shaped nitride based semiconductor pattern and at least a low dislocation density region positioned over said window region, and said low dislocation density region being lower in dislocation density than said high dislocation density region,
- wherein said low dislocation density region includes a current injection region into which a current is injected, and said active layer is less than 1×1018 m−3 in impurity concentration.
Dependencies are inferred from the claim text.