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AssigneeApplied Materials, Inc.
InventorsPraburam Gopalraja, Jianming Fu, Fusen Chen, Girish Dixit, Zheng Xu, Wei Wang, Ashok K. Sinha
Estimating the term…
A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Preferably, the magnetron includes annular magnets of opposed polarities disposed behind the two vault sidewalls and a small closed unbalanced magnetron of nested magnets of opposed polarities scanned along the vault roof. The nested magnets are rotated along the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.
A magnetron plasma sputter reactor, comprising:
A magnetron plasma sputter reactor, comprising:
A magnetron for use with a vaulted target having an annular vault arranged about a central axis, having an inner sidewall, an outer sidewall, and a roof, said magnetron system comprising:
Dependencies are inferred from the claim text.