Dry etching system for patterning target layer at high reproducibility and method of dry etching used therein
AssigneeNEC Corporation
InventorToshiaki Sango
Life of this patent
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Abstract
A dry etching is carried out for a single semiconductor wafer electrostatically attracted to a static chuck in the presence of a plasma, wherein a controlling system applies a relatively large direct current voltage to the static chuck when a lapse of time from the previous dry etching is longer than a critical lapse of time and when a place occupied by the single semiconductor wafer in a lot is equal to or less than a critical place so that micro-contact holes formed over the semiconductor wafers in the lot are fallen within a target diameter range.
Claims19
A dry etching system comprising
- a reactor having an etching chamber therein,
- a static chuck provided in said etching chamber and supplied with a direct current voltage so as to electrostatically attracting a single semiconductor wafer thereto,
- a gas control system supplying a process gas to said etching chamber and maintaining the pressure of said process gas at a target range,
- a plasma generator provided in said etching chamber and generating a plasma from said process gas in the vicinity of said single semiconductor wafer for a dry etching, and
- a process controlling system for supervising said dry etching and changing said direct current voltage between a standard value and a certain value different from said standard value on the basis of a place occupied by said single semiconductor wafer in a semiconductor wafer lot and a lapse of time from the previous dry etching.
A method for a dry etching, comprising the steps of:
- a) conveying a single semiconductor wafer from a semiconductor wafer lot onto a static chuck,
- b) determining a magnitude of a direct current voltage to be applied to said static chuck on the basis of a place occupied by said single semiconductor wafer in said semiconductor wafer lot and a lapse of time from the previous dry etching,
- c) getting ready for said dry etching through application of said direct current voltage to said static chuck for electrostatically attracting said single semiconductor wafer to said static chuck, and
- d) carrying out said dry etching on said single semiconductor wafer.
Dependencies are inferred from the claim text.