# US 2001/0024871 A1 · Semiconductor device and method and apparatus for manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2001/0024871 A1 - Document ID: US20010024871A1 - Status: Published application - Kind: A1 - Application number: 09/772,863 - Filed: 2001-01-31 - Published: 2001-09-27 - Earliest claimed: 1998-04-24 - Assignees: Fuji Xerox Co., Ltd. - Inventors: Shigeru Yagi - Web page: https://patentgrep.com/patent/US20010024871A1 ## CPC - C23C 16/45523: {Pulsed gas flow or change of composition over time} - C23C 16/303: {Nitrides} - C23C 16/452: by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species - C30B 25/02: Epitaxial-layer growth - C30B 25/18: characterised by the substrate - C30B 29/38: Nitrides - C30B 29/403: {AIII-nitrides} - C30B 29/406: {Gallium nitride} - H01J 2237/32: Processing objects by plasma generation - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10H 20/0137: {the light-emitting regions comprising nitride materials} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract Provided is a method and apparatus for the production of a semiconductor device, the method and the apparatus producing a high quality and highly functional semiconductor device efficiently at low temperatures in a short time and also a high quality and highly functional semiconductor device produced by the method and apparatus. The semiconductor device is produced by forming a film of a nitride compound on a substrate having heat resistance at 600° C. or less, wherein the nitride compound includes one or more elements selected from group IIIA elements of the periodic table and a nitrogen atom and produces photoluminescence at the band edges at room temperature. The method for producing a semiconductor device comprises introducing an organic metal compound containing one or more elements selected from group IIIA elements of the periodic table intermittently in an activated environment, while continuously activating a nitrogen compound, to form a film of a nitride compound containing nitrogen and the group IIIA elements on a substrate. ## Claims ### Claim 1 A semiconductor device produced by forming a film of a nitride compound on a substrate having heat resistance at 600° C. or less, wherein the nitride compound includes one or more elements selected from group IIIA elements of the periodic table and a nitrogen atom and produces photoluminescence at the band edges at room temperature. ### Claim 2 (depends on 1) A semiconductor device according to claim 1, wherein said substrate is constituted of a base material selected from the group consisting of an electroconductive material, a semiconductor material and an insulating material. ### Claim 3 (depends on 1) A semiconductor device according to claim 1, wherein said substrate is transparent. ### Claim 4 (depends on 2) A semiconductor device according to claim 2, wherein said substrate is transparent. ### Claim 5 A semiconductor device produced by forming a film of a nitride compound on a substrate having heat resistance at 600° C. or less, the nitride compound including one or more elements selected from group IIIA elements of the periodic table and a nitrogen atom, wherein the absorption wavelength for the nitride compound in an infrared absorption spectrum ranges between 3000 cm−1 and 700 cm−1. ### Claim 6 (depends on 5) A semiconductor device according to claim 5, wherein the absorption wavelength for said nitride compound in an infrared absorption spectrum further ranges between 700 cm−1 and 400 cm−1 and the ratio (Ia/Ib) of the maximum absorbance (Ia) in a wavelength range between 3000 cm−1 and 700 cm−1 to the maximum absorbance (Ib) in a wavelength range between 700 cm−1 and 400 cm−1 is 0.01 or more. ### Claim 7 (depends on 5) A semiconductor device according to claim 5, wherein said substrate is opaque and the semiconductor device is used as a photovoltaic element. ### Claim 8 (depends on 1) A semiconductor device according to claim 1, wherein the nitride compound is a mixed crystal of two or more semiconductor compounds. ### Claim 9 A method for producing a semiconductor device, the method comprising continuously activating a nitrogen compound while introducing an organic metal compound containing one or more elements selected from IIIA elements of the periodic table intermittently in the activated environment, to form a film of a nitride compound containing nitrogen and said group IIIA elements on a substrate. ### Claim 10 (depends on 9) A method for producing a semiconductor device according to claim 9, wherein hydrogen or a compound containing hydrogen is further added to said activated environment. ### Claim 11 (depends on 9) A method for producing a semiconductor device according to claim 9, wherein said organic metal compound comprises two or more organic metal compounds containing different group IIIA elements and said nitride compound is a mixed crystal of two or more semiconductor compounds. ### Claim 12 (depends on 11) A method for producing a semiconductor device according to claim 11, wherein said two or more organic metal compounds are introduced intermittently at the same time. ### Claim 13 (depends on 11) A method for producing a semiconductor device according to claim 11, wherein said two or more organic metal compounds are introduced intermittently so as not to overlap each other in time. ### Claim 14 (depends on 9) A method for producing a semiconductor device according to claim 9, wherein a raw material for pn control is further added to said activated environment. ### Claim 15 (depends on 9) A method for producing a semiconductor device according to claim 9, wherein glow discharge using radio frequency and/or glow discharge using microwave are used for said activation of the nitride compound. ### Claim 16 (depends on 9, 10, 11, 12, 13, 14, 15) A method for producing a semiconductor device according to any one of claims 9 to 15, wherein the temperature at which the film is formed on said substrate is 600° C. or less. ### Claim 17 A method for producing a semiconductor device, the method comprising continuously activating a nitrogen compound, continuously and separately activating an assistant material which is different from said nitrogen compound simultaneously and introducing an organic metal compound containing one or more elements selected from group IIIA elements of the periodic table intermittently in the environment in which the assistant material is activated, to form a film of a nitride compound containing nitrogen and said group IIIA elements on a substrate. ### Claim 18 An apparatus for producing a semiconductor device comprising: a reactor for forming a film of a nitride compound on a substrate; a heating and supporting means provided in said reactor for supporting and heating the substrate; a first supply means for supplying a first raw gas; a first activating means for activating the supplied first raw gas, the first activating means being connected to the first supply means and the reactor; and a second supply means for supplying a second raw gas intermittently to said reactor. ### Claim 19 (depends on 18) An apparatus for producing a semiconductor device according to claim 18, further comprising: a third supply means for supplying a third gas; and a second activating means for activating the supplied third gas, the second activating means being connected to said reactor and the third supply means. ### Claim 20 (depends on 19) An apparatus for producing a semiconductor device according to claim 19, further comprising a fourth supply means for supplying a fourth raw gas to the reactor side of said second activating means, wherein said second supply means connects to the reactor side of said first activating means.