# US 2001/0023949 A1 · SOI active pixel cell design with grounded body contact

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2001/0023949 A1
- Document ID: US20010023949A1
- Status: Published application
- Kind: A1
- Application number: 09/862,817
- Filed: 2001-05-22
- Published: 2001-09-27
- Earliest claimed: 1999-01-14
- Assignees: International Business Machines Corporation
- Inventors: Jeffrey B. Johnson; Hon-Sum P. Wong
- Web page: https://patentgrep.com/patent/US20010023949A1

## CPC

- H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements}
- H10F 39/807: {Pixel isolation structures}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A photosensitive device includes an array of active pixel sensor devices, each APS device being formed in an isolated cell of silicon. Each cell has an insulating barrier around it, and sits upon an insulating layer formed on an underlying substrate. A semiconductor connector making vertical contact between the pinning layer and the body of each APS device preferably replaces at least some portion of the insulating barrier adjacent to each cell. The semiconductor connector may be a single vertical connection for each cell or it may be an elongated strip connecting multiple APS devices. It may extend only to the underlying insulating layer or it may extend through the insulating layer to the substrate, with the substrate acting to interconnect and ground the pinning layer and the body of each APS device. The invention also includes the method of making the photosensitive device.

## Claims

### Claim 1

A photosensitive device comprising:
a substrate;
an insulating layer formed on the substrate;
a semiconductor layer formed on the insulating layer;
an insulating barrier extending through the semiconductor layer to the insulating layer, the insulating barrier dividing the semiconductor layer into a plurality of cells of semiconductor material; and
a plurality of photosensitive active pixel sensors constructed in corresponding ones of the plurality of cells in the semiconductor layer.

### Claim 2 (depends on 1)

A photosensitive device according to claim 1 wherein each active pixel sensor comprises:
a body;
a pinning layer; and
a photosensitive region formed below the pinning layer;
the body and the pinning layer being electrically connected together.

### Claim 3 (depends on 2)

A photosensitive device according to claim 2 wherein the body and the pinning layer of each active pixel sensor are electrically connected together by a semiconductor connector extending from the pinning layer to the body.

### Claim 4 (depends on 3)

A photosensitive device according to claim 3 wherein the semiconductor connector forming the electrical connection between the body and the pinning layer of each active pixel sensor is a trench filled with semiconductor material, the trench extending along a side of the cell containing the active pixel sensor.

### Claim 5 (depends on 4)

A photosensitive device according to claim 4 wherein the trench extends along at least two adjacent cells, the semiconductor material in the trench electrically connecting the body portions of the active pixel sensors corresponding to the two adjacent cells.

### Claim 6 (depends on 3)

A photosensitive device according to claim 3 wherein the semiconductor connector forming the electrical connection between the body and the pinning layer of each active pixel sensor is a semiconductor plug in the form of a vertical column extending from the pinning layer to the body of the active pixel sensor.

### Claim 7 (depends on 3)

A photosensitive device according to claim 3 wherein the semiconductor connector electrically connecting the body to the pinning layer of each active pixel sensor is located in the insulating barrier.

### Claim 8 (depends on 7)

A photosensitive device according to claim 7 wherein the insulating barrier has a width and the semiconductor connector has a width, the width of semiconductor connector being approximately the same as the width of the insulating barrier.

### Claim 9 (depends on 7)

A photosensitive device according to claim 7 wherein the insulating barrier has a width and the semiconductor connector has a width, the width of semiconductor connector being less than the width of the insulating barrier.

### Claim 10 (depends on 1)

A photosensitive device according to claim 1 wherein the substrate is silicon.

### Claim 11

A method of making a photosensitive device comprising the steps of:
providing a substrate;
depositing an insulating layer on the substrate;
forming a semiconductor layer on the insulating layer;
etching a plurality of trenches into the semiconductor layer, the trenches extending through the semiconductor layer to the insulating layer, the trenches dividing the semiconductor layer into a plurality of isolated cells of semiconductor material;
depositing an insulating material into the trenches to form an insulating barrier extending through the semiconductor layer to the insulating layer, the insulating barrier electrically isolating the semiconductor material in each cell from the semiconductor material in other cells; and
constructing an active pixel sensor in the semiconductor material of each cell, each active pixel sensor including a body, a pinning layer and a photosensitive region.

### Claim 12 (depends on 11)

A method of making a photosensitive device according to claim 11 further including the step of electrically connecting the body of each active pixel sensor to the corresponding pinning layer of each active pixel sensor.

### Claim 13 (depends on 12)

A method of making a photosensitive device according to claim 12 wherein the step of electrically connecting the body of each active pixel sensor to the corresponding pinning layer of each active pixel sensor comprises the steps of:
masking the photosensitive device with a body contact mask having openings which leave exposed portions of the insulating material in the trenches, the exposed portions of insulating material being adjacent to each active pixel sensor;
etching the insulating material through the body contact mask to a depth sufficient to reach the body of each active pixel sensor; and
depositing semiconductor material in the etched locations to connect the body of each active pixel sensor to the corresponding pinning layer of each active pixel sensor.

### Claim 14 (depends on 13)

A method of making a photosensitive device according to claim 13 wherein the openings in the body contact mask correspond to the active pixel sensors and the semiconductor material deposited in the etched locations forms a semiconductor plug in the form of a vertical column individually connecting the body of each active pixel sensor to the corresponding pinning layer of each active pixel sensor.

### Claim 15 (depends on 13)

A method of making a photosensitive device according to claim 13 wherein each opening in the body contact mask corresponds to multiple active pixel sensors and the deposited semiconductor material forms a semiconductor strip electrically connecting together the bodies and pinning layers of the multiple active pixel sensors.

### Claim 16 (depends on 13)

A method of making a photosensitive device according to claim 13 wherein the step of etching the insulating material through the body contact mask includes etching the insulating material through the body contact mask to a depth sufficient to reach the substrate, and wherein the substrate is a semiconductor material.

### Claim 17 (depends on 13)

A method of making a photosensitive device according to claim 13 wherein each opening in the body contact mask has a width that is less than the width of the trench containing the insulating material exposed through each opening.

### Claim 18

Apparatus comprising:
a plurality of active silicon regions;
an insulating barrier;
a plurality of pixel cells;
a plurality of conductive plugs;
the plurality of pixel cells each formed in one of the plurality of active silicon regions and each comprising a pinning layer, an n region and a p region;
the insulating barrier electrically insulating each of the active silicon regions from each of the other active silicon regions; and
the conductive plugs each coupling the pinning layer to the p region in a corresponding pixel cell.

### Claim 19 (depends on 18)

The apparatus of claim 18 further comprising a grounded conductor coupled to at least some of the conductive plugs.