Single crystal silicon sensor with high aspect ratio and curvilinear structures and associated method

A semiconductor sensor comprising:

• a first single crystal silicon wafer layer;
• a curvilinear single crystal silicon structure formed in said first wafer layer and including two generally opposite facing first substantially vertical surface portions and two generally opposite facing first generally horizontal surface portions;
• and
• a second single crystal wafer layer including a recessed region wherein said second wafer layer is secured to said first wafer layer such that said structure is suspended opposite the recessed region

A semiconductor sensor comprising:

• a first single crystal silicon wafer layer;
• a single crystal silicon structure formed in said first wafer layer and including two substantially vertical surfaces and two generally horizontal surfaces wherein a height of the vertical surfaces is substantially uniform and wherein a width of the horizontal surfaces is nonuniform;
• and
• a carrier including a recessed region wherein said carrier is secured to said first wafer layer such that said structure is suspended opposite the recessed region.

A semiconductor sensor comprising:

• a first single crystal silicon wafer layer;
• a plurality of single crystal silicon plates formed in said first wafer layer and having an aspect ratio of at least 10:1;
• and
• a second single crystal wafer layer secured to said first wafer layer such that said plates are suspended over the second wafer layer.

A semiconductor sensor comprising:

• a first single crystal silicon wafer layer;
• a plurality of single crystal silicon beams formed in said first wafer layer and having an aspect ratio of at least 10:1;
• and
• a second single crystal wafer layer secured to said first wafer layer such that said beams are suspended over the second wafer layer

A semiconductor sensor produced by the steps of:

• providing a first single crystal silicon wafer layer;
• providing a carrier;
• including a recessed region bonding the first wafer layer to the carrier with the recessed region facing the first wafer layer;
• and
• etching substantially vertically through the first wafer layer opposite the recessed region in a curvilinear pattern so as to form a curvilinear structure integral with the first wafer layer and suspended over the recessed region.

A semiconductor sensor produced by the steps of:

• providing a first single crystal silicon wafer layer,
• providing a carrier including a recessed region bonding the first wafer layer to the carrier with the recessed region facing the first wafer layer;
• and
• etching substantially vertically through the first wafer layer opposite the recessed region so as to form a beam integral with the first wafer layer and suspended over the recessed region wherein the beam has an aspect ratio of height to width of at least 5:1.

A semiconductor sensor produced by the steps of:

• providing a first single crystal silicon wafer layer
• providing a carrier including a recessed region fusion bonding the first wafer layer to the carrier with the recessed region facing the firs wafer layer;
• and
• etching substantially vertically through the first wafer layer opposite the recessed region so as to form a plate integral with the first wafer layer and suspended over the recessed region wherein the plate has an aspect ratio of height to width of at least 5:1.