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US 2001/0019901 A1Published application
Process of manufacturing semiconductor device
AssigneeSony Corporation
InventorsNaoki Sano, Masaki Hara, Mitsunobu Sekiya, Toshiyuki Sameshima
Life of this patent
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Abstract
A target semiconductor device can be obtained stably by reforming an insulating film and a semiconductor. In a process of manufacturing a semiconductor device, at least one of the semiconductor and the insulating film is reformed after an annealing process for annealing the semiconductor at a temperature ranging from 20 to 400° C. in the atmosphere containing a gas of water (H2O) with a partial pressure from 1 Torr to a saturated vapor pressure for an annealing time ranging from 15 seconds to 20 hours.
Claims10
A process of manufacturing a semiconductor device comprising the steps of:
- annealing a semiconductor at a temperature ranging from 20 to 400° C. in the atmosphere containing a gas of water with a partial pressure higher than 1 Torr and lower than a saturated vapor pressure for an annealing time from 15 seconds to 20 hours;
- and
- reforming at least one of said semiconductor and an insulating film.
Dependencies are inferred from the claim text.