US 2001/0019877 A1 · Method of forming silicon-contained crystal thin film

Abstract

A method of forming a silicon-contained crystal thin film can efficiently form the crystal thin film of a relatively large thickness. In the method, hydrogen ions are implanted into a silicon-contained crystal substrate. Voids are formed by immersing the ion-implanted crystal substrate in a melted metal liquid containing, e.g., silicon and indium for heating the substrate. While pressing an ion-injected surface of the substrate, the substrate is heated by the melted metal liquid to form the voids. By cooling the liquid, the silicon in the supersaturated liquid is deposited on the surface of the substrate so that the silicon-contained crystal film is formed on the surface of the substrate. The substrate is divided in the void-formed position. Thereby, a thin film including the silicon-contained crystal film layered on a portion of the substrate is obtained. The silicon-contained crystal thin film thus obtained can be adhered to a support substrate, if necessary.

Claims15

Dependent claims

A method of forming a silicon-contained crystal thin film comprising:

an ion implanting step of implanting hydrogen ions or helium ions into a silicon-contained crystal substrate containing silicon at 10% or more by weight;
a void forming step of forming a void in an ion-implanted position of said crystal substrate by heating said crystal substrate subjected to the ion implantation;
an epitaxial growth step of immersing the ion-implanted crystal substrate in a melted metal liquid containing silicon, and cooling said liquid to cause epitaxial growth to form a monocrystalline or polycrystalline thin film primarily made of silicon on an ion-injected surface of said substrate;
and
a dividing step of dividing the crystal substrate provided with the crystal thin film in the void-formed position, wherein
the heating of said crystal substrate performed for the void formation in said void forming step is performed by immersing at least the ion-injected surface of said crystal substrate in the melted metal liquid used in said epitaxial growth step.

3 more elements

Dependencies are inferred from the claim text.

Method of forming silicon-contained crystal thin film

Life of this patent

Method of forming silicon-contained crystal thin film

Life of this patent

Abstract

Claims15