US 2001/0019871 A1 · Semiconductor device having SOI structure and method of fabricating the same

Abstract

A semiconductor device having an SOI structure capable of effectively preventing diffusion of an impurity from a source/drain region on an endmost portion of a silicon layer under a gate electrode is disclosed. In this semiconductor device, nitrogen is introduced into at least either a source/drain region or an end portion of a semiconductor layer located under a gate electrode, and the concentration profile of the nitrogen has a first concentration peak at least in either one of an endmost portion of the source/drain region in the direction where the gate electrode extends and an endmost portion of the semiconductor layer located under the gate electrode. Due to this concentration profile of nitrogen, point defects or the like serving as mediation for diffusion of an impurity are trapped, whereby diffusion of the impurity from the source/drain region is inhibited as a result. Thus, generation of an abnormal leakage current or the like is prevented.

Claims10

Dependent claims

A semiconductor layer having a major surface, being formed on an insulator;

a pair of source/drain regions of a first conductivity type being formed to define a channel region on the major surface of said semiconductor layer;
a gate electrode being formed on the major surface of said semiconductor layer through a gate insulator film;
and
a semiconductor device having an SOI structure, wherein nitrogen is introduced into at least either said source/drain regions or an end portion of said semiconductor layer located under said gate electrode, and the concentration profile of said nitrogen has a first concentration peak in at least either one of endmost portions of said source/drain regions in a direction where said gate electrode extends and an endmost portion of said semiconductor layer located under said gate electrode.

1 more element

A method of fabricating a semiconductor device having an SOI structure comprising:

a step of forming a semiconductor layer having a major surface on an insulator;
a step of forming a first injection mask on said semiconductor layer;
a step of ion-implanting a first conductivity type impurity into an isolation injection region of said semiconductor layer by employing said first injection mask as a mask thereby forming an impurity region having a higher impurity concentration than a channel region;
a step of forming a gate electrode on the major surface of said semiconductor layer through a gate insulator film;
a step of ion-implanting a second conductivity type impurity into said semiconductor layer by employing said gate electrode as a mask thereby forming a source/drain region;
injecting nitrogen by employing at least either said first mask or said gate electrode as a mask;
and
a step of performing heat treatment after injection of said nitrogen thereby making the concentration peak of said nitrogen located on an endmost portion of said semiconductor layer.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor device having SOI structure and method of fabricating the same

Life of this patent

Semiconductor device having SOI structure and method of fabricating the same

Life of this patent

Abstract

Claims10