Method of forming a polycrystalline silicon layer
AssigneeLG.Philips LCD Co., Ltd.
InventorMyoung-Su Yang
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Abstract
The present invention discloses a method of forming a polycrystalline silicon layer, comprising: forming an amorphous silicon layer on a substrate; a first step of melting completely the amorphous silicon layer using a laser beam thereby forming the polycrystalline silicon layer by adopting a mask; and a second step of melting an upper portion the polycrystalline silicon layer using the laser beam by adopting the mask thereby recrystallizing the upper portion of the polycrystalline silicon layer. The defects of the upper portion of the polycrystalline silicon layer is prevented.
Claims17
A method of forming a polycrystalline silicon layer, comprising:
- forming an amorphous silicon layer on a substrate;
- a first step of melting completely the amorphous silicon layer using a laser beam thereby forming the polycrystalline silicon layer by adopting a mask;
- and
- a second step of melting an upper portion the polycrystalline silicon layer using the laser beam by adopting the mask thereby recrystallizing the upper portion of the polycrystalline silicon layer.
A method of forming a polycrystalline silicon layer, comprising:
- forming an amorphous silicon layer on a substrate;
- melting said amorphous silicon layer using a laser beam so as to form a polycrystalline silicon layer;
- and
- re-melting an upper portion of said polycrystalline silicon layer using a laser beam so as to re-crystallize said upper portion.
A laser-based crystallization apparatus, comprising:
- a laser beam;
- a mask receving said laser beam, said mask including a high transparency region for passing said laser beam with little attenuation, and a low transparancy region for attenuating said laser beam;
- a projection lens for receiving said laser beam from said mask, said projection lens for focusing said laser beam onto a substrate.
Dependencies are inferred from the claim text.