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US 2001/0019847 A1Published application
Method of forming thin copper film
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsTAKESHI MORI, TETSUO FUKADA, MAKIKO HASEGAWA, YOSHIHIKO TOYODA
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Abstract
Copper material is exposed on the surface of a TiN film (an underlying film) formed in the main surface of a silicon substrate with a silicon oxide film interposed. Subsequently, a thin copper film is formed on TiN film. Thus, the thin copper film can be formed on the film including metal with high melting point or nitride thereof with high adhesion by means of CVD.
Claims6
A method of forming a thin copper film on an underlying film including metal with high melting point or nitride thereof, comprising:
- the step of exposing copper material to a surface of said underlying film;
- and
- the step of forming the thin copper film on said underlying film after the exposure of said copper material.
A semiconductor device with a thin copper film, comprising:
- an insulation film formed on a semiconductor substrate;
- the thin copper film formed in said insulation film;
- and
- an underlying film formed between said thin copper film and said insulation film in tight contact with a surface of said thin copper film, and including metal with high melting point or nitride thereof.
1 more element
Dependencies are inferred from the claim text.