Deposition mask and manufacturing method thereof, and electroluminescence display device and manufacturing method thereof

A method for manufacturing a deposition mask, wherein

• said deposition mask for placing between a depositing material and a medium on which deposition is performed comprises a semiconductor substrate including an opening forming region having a reduced thickness provided with at least one opening for allowing said depositing material to be selectively attached to a desired position on said medium, and a thick portion formed in at least one portion of a mask outer periphery region of said semiconductor substrate,
• said method comprising the steps of:
• forming a first coating covering a region in which said thick portion of said semiconductor substrate is to be formed;
• using said first coating as an etching mask to etch said semiconductor substrate so as to reduce thickness of said semiconductor substrate and thereby form said opening forming region;
• forming a second coating in areas other than a predetermined position within said opening forming region;
• and
• using said second coating as an etching mask to etch said semiconductor substrate so as to form said at least one opening in said predetermined position.

A method for manufacturing an electroluminescence display device composed by arranging a plurality of display pixels, each display pixel having an electroluminescence element including at least an emissive layer between first and second electrodes, said method comprising the steps of:

• arranging a deposition mask on a medium having said first electrode formed thereon;
• and
• attaching an emissive material from an emissive material source via an opening in said deposition mask to a corresponding display pixel region of said medium, thereby forming an emissive layer for each pixel;
• wherein
• said deposition mask for placing between a depositing material and said medium on which deposition is performed comprises a semiconductor substrate including an opening forming region having a reduced thickness provided with at least one opening for allowing said depositing material to be selectively attached to a desired position on said medium, and a thick portion formed in at least one portion of a mask outer periphery region of said semiconductor substrate;
• and
• said deposition mask is obtained through the steps of:
• forming a first coating covering a region in which said thick portion of said semiconductor substrate is to be formed;
• using said first coating as an etching mask to etch said semiconductor substrate so as to reduce thickness of said semiconductor substrate and thereby form said opening forming region;
• forming a second coating in areas other than a predetermined position within said opening forming region;
• and
• using said second coating as an etching mask to etch said semiconductor substrate so as to form said at least one opening in said predetermined position.