Back to results
US 2001/0019802 A1Published application
Method for forming photo-mask
AssigneeOki Electric Industry Co., Ltd.
InventorsYuji Nozaki, Yasuki Kimura
Life of this patent
Estimating the term…
Abstract
A method for forming a photo-mask includes a step which forms a light-shielding layer on a substrate, which coats a resist film on the light-shielding layer, which exposes the resist film with low dosage, and which inclines a resist profile after develop of the exposed resist film by the exposing step. Accordingly, it can form opening dimension of the light-shielding layer as designed without depending on the location of region formed resist pattern in the photo-mask.
Claims16
A method for forming a mask comprising:
- forming a light-shielding layer on a substrate;
- forming a resist film on the light-shielding layer;
- exposing the resist film with low dosage using electron beam exposure according to a predetermined pattern data;
- and
- forming a resist pattern by developing the exposed resist pattern.
2 more elements
A method for forming a mask comprising:
- forming a light-shielding layer on a substrate;
- forming a resist film having small and large regions on the light-shielding layer, the small and the large regions being defined as the exposed area;
- exposing the resist film with low dosage using electron beam exposure according to a predetermined pattern data;
- and
- forming a resist pattern having a first opening in the small region and a second opening in the large region by developing the exposed resist pattern;
- wherein the elevation angle of the first opening sidewall in the small region is smaller than an elevation angle of the second opening sidewall in the large region.
3 more elements
Dependencies are inferred from the claim text.