In-situ silicon nitride and silicon based oxide deposition with graded interface for damascene application

A process for forming an interface between a silicon nitride film and a silicon oxide film on a substrate within a plasma process chamber utilizing a combination of gases, comprising the steps of:

• forming the silicon nitride film using a silicon-containing gas and a nitrogen-containing gas;
• forming the interface by introducing an oxygen-containing gas into the mixture of the silicon-containing gas and the nitrogen-containing gas into the plasma process chamber;
• and
• forming the silicon oxide film on the interface.

A process for forming a semiconductor device, comprising the steps of:

• providing a semiconductor substrate;
• forming a silicon nitride film on the semiconductor substrate;
• forming a graded silicon oxynitride film on the silicon nitride film;
• forming a silicon oxide film on the graded silicon oxynitride film;
• forming an opening extending through the silicon oxide film, the silicon oxynitride film and the silicon nitride film;
• and
• forming an electrically conductive film within the opening.

A semiconductor device, comprising:

• a substrate;
• a layer of silicon nitride on the substrate;
• a layer of graded silicon oxynitride on the silicon nitride;
• and
• a layer of silicon oxide on the graded silicon oxynitride.