Semiconductor device provided with semiconductor circuit consisting of semiconductor element and method of manufacturing the same

A method of manufacturing a semiconductor device provided with a semiconductor circuit comprising a semiconductor element, comprising:

• forming a gate wiring over a substrate;
• sequentially forming a gate insulating film, a semiconductor film and an insulating film over said gate wiring and the substrate without exposing to the air;
• crystallizing said semiconductor film by irradiating the semiconductor film through said insulating film with light to obtain a crystalline semiconductor film;
• patterning said crystalline semiconductor film and said insulating film to form a protective film and an active layer an end face of which is flush with an end face of said protective film;
• and
• covering with a mask a region to be a channel formation region of said active layer, and adding through said protective film impurity elements that give N type or P type conductivity.

A method of manufacturing a semiconductor device provided with a semiconductor circuit comprising a semiconductor element, comprising:

• forming a gate wiring over a substrate;
• sequentially forming a gate insulating film, a semiconductor film and an insulating film over said gate wiring and the substrate without exposing to the air;
• crystallizing said semiconductor film by irradiating the semiconductor film through said insulating film with infrared light or ultraviolet light to obtain a crystalline semiconductor film;
• covering with a mask a region to be a channel formation region of said crystalline semiconductor film, and adding through said insulating film impurity elements that give N type or P type conductivity;
• patterning said insulating film to form a protective film;
• and
• patterning said crystalline semiconductor film to form an active layer an end face of which is flush with an end face of said protective film.

A method of manufacturing a semiconductor device provided with a semiconductor circuit comprising a semiconductor element, comprising:

• forming a gate wiring over a substrate;
• sequentially forming a gate insulating film, a semiconductor film and an insulating film over said gate wiring and the substrate without exposing to the air;
• crystallizing said semiconductor film by irradiating the semiconductor film through said insulating film with infrared light or ultraviolet light to obtain a crystalline semiconductor film;
• patterning said crystalline semiconductor film and said insulating film to form a protective film and an active layer an end face of which is flush with an end face of said protective film;
• covering with a first mask a region to be a channel formation region of said active layer, and adding through said protective film impurity elements that give N type or P type conductivity;
• and
• adding with the use of a second mask impurity elements that give N type or P type conductivity in a region to be a source region or a drain region of said active layer.

A method of manufacturing a semiconductor device provided with a semiconductor circuit comprising a semiconductor element, comprising:

• forming a gate wiring over a substrate;
• sequentially forming a gate insulating film, a semiconductor film and an insulating film over said gate wiring and the substrate without exposing to the air;
• crystallizing said semiconductor film by irradiating the semiconductor film through said insulating film with infrared light or ultraviolet light to obtain a crystalline semiconductor film;
• patterning said crystalline semiconductor film and said insulating film to form a protective film and an active layer an end face of which is flush with an end face of said protective film;
• covering with a first mask a region to be a channel formation region of said active layer, and adding through said protective film impurity elements that give N type or P type conductivity;
• adding with the use of a second mask impurity elements that give N type or P type conductivity in a region to be a source region or a drain region of said active layer;
• and
• removing said first mask and said second mask at once.

A method of manufacturing a semiconductor device provided with a semiconductor circuit comprising a semiconductor element, comprising:

• forming a gate wiring over a substrate;
• sequentially forming a gate insulating film, a semiconductor film and an insulating film over said gate wiring and the substrate without exposing to the air;
• crystallizing said semiconductor film by irradiating the semiconductor film through said insulating film with infrared light or ultraviolet light to obtain a crystalline semiconductor film;
• covering with a first mask a region to be a channel formation region of said crystalline semiconductor film, and adding through said insulating film impurity elements that give N type or P type conductivity;
• adding with the use of a second mask impurity elements that give N type or P type conductivity in a region to be a source region or a drain region of said crystalline semiconductor film;
• patterning said insulating film to form a protective film;
• and
• patterning said crystalline semiconductor film to form an active layer an end face of which is flush with an end face of said protective film.

A method of manufacturing a semiconductor device provided with a semiconductor circuit comprising a semiconductor element, comprising:

• forming a gate wiring over a substrate;
• sequentially forming a gate insulating film, a semiconductor film and an insulating film over said gate wiring and the substrate without exposing to the air;
• crystallizing said semiconductor film by irradiating the semiconductor film through said insulating film with infrared light or ultraviolet light to obtain a crystalline semiconductor film;
• covering with a first mask a region to be a channel formation region of said crystalline semiconductor film, and adding through said insulating film impurity elements that give N type or P type conductivity;
• adding with the use of a second mask impurity elements that give N type or P type conductivity in a region to be a source region or a drain region of said crystalline semiconductor film;
• removing said first mask and said second mask at once;
• patterning said insulating film to form a protective film;
• and
• patterning said crystalline semiconductor film to form an active layer an end face of which is flush with an end face of said protective film.