Semiconductor memory device and manufacturing method of the same
AssigneeNEC Corporation
InventorMasato Sakao
Life of this patent
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Abstract
A plurality of charge storage electrodes are formed on an interlayer insulating film which is formed on a silicon substrate. A plurality of insulating members which surround periphery of the charge storage electrodes and which are separated from each other are formed. A capacitance insulating film is so formed as to cover the plurality of charge storage electrodes and the plurality of insulating members. A plate electrode is formed on the capacitance insulating film. The insulating members are formed of a silicon nitride film which has a function as an etching stopper for protecting the interlayer insulating film.
Claims9
A semiconductor memory device comprising:
- a semiconductor substrate;
- an interlayer insulating film which is formed on said semiconductor substrate;
- a plurality of charge storage electrodes which are formed on said interlayer insulating film;
- a plurality of insulating members which are formed and separated from each other on said interlayer insulating film, so as to surround periphery of said plurality of charge storage electrodes;
- a capacitance insulating film which is so formed as to cover said plurality of charge storage electrodes and said insulating members;
- and
- a plate electrode which is formed on said capacitance insulating film.
A method of manufacturing a semiconductor memory device, comprising:
- forming a first insulating film on an interlayer insulating film which is formed on a semiconductor substrate;
- forming a second insulating film on the first insulating film;
- forming a plurality of openings in the first insulating film and the second insulating film;
- forming a plurality of charge storage electrodes on the interlayer insulating film by arranging an electric conductor in each of the openings;
- forming a plurality of sidewalls surrounding the charge storage electrodes on the first insulating film, by removing the second insulating film;
- etching the first insulating film using the sidewalls as etching masks, and removing the first insulating film except under the sidewalls, so as to form, on the interlayer insulating film, a plurality of insulating members which surround periphery of the charge storage electrodes and which are separated from each other,
- removing each of the sidewalls;
- forming a capacitance insulating film which covers the charge storage electrodes and the insulating members;
- and
- forming a plate electrode on the capacitance insulating film.
Dependencies are inferred from the claim text.