Semiconductor device and method of fabricating the same
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsTAKUMI NAKAHATA, SATOSHI YAMAKAWA, YOSHIHIKO TOYODA
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Abstract
A polysilicon film, a titanium silicide film and a titanium nitride film are formed in a storage node contact hole of a memory cell region, while a polysilicon film, a titanium silicide film and a titanium nitride film are formed in a bit line contact hole. In a peripheral circuit region, a peripheral circuit contact hole is formed in a silicon oxide film, and another peripheral circuit contact hole is formed in an interlayer insulation film and a silicon oxide film. Thus obtained are a semiconductor device reducing a leakage current, suppressing an electrical short and attaining a high-speed operation while readily forming each contact hole and a method of fabricating the same.
Claims20
A semiconductor device comprising:
- a semiconductor substrate having a major surface;
- a first region being formed on said major surface of said semiconductor substrate;
- a first impurity region being formed on a surface of said first region;
- a first conductor layer being formed on a surface of said first impurity region;
- a second conductor layer being formed on said first conductor layer;
- a third conductor layer being formed on said second conductor layer;
- a first insulator layer being formed on said semiconductor substrate to enclose said first to third conductor layers;
- and
- a first conductor region being formed on said first insulator layer and electrically connected with said third conductor layer,
- said first conductor layer containing silicon,
- said second conductor layer containing a compound of silicon and a prescribed metal,
- said third conductor layer containing prescribed said metal or a compound of said metal.
A method of fabricating a semiconductor device comprising steps of:
- forming a first impurity region on a major surface of a semiconductor substrate;
- forming a first conductor layer containing silicon on a surface of said first impurity region;
- forming a conductive material layer containing a prescribed metal on said first conductor layer and heat-treating the same thereby forming a second conductor layer containing a compound of said silicon being contained in said conductor layer and prescribed said metal;
- forming a third conductor layer containing said metal or a compound of said metal on said second conductor layer;
- forming a first insulator layer on said semiconductor substrate to enclose said first to third conductor layers;
- and
- forming a first conductor region being electrically connected with said third conductor layer on said first insulator layer.
Dependencies are inferred from the claim text.