Semiconductor device with capacitive element and method of forming the same
AssigneeNEC Corporation
InventorSeiichi Takahashi
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Abstract
The present invention provides a semiconductor device having at least a multilevel metal interconnection structure, at least a capacitor which lies over the multilevel metal interconnection structure, and an inter-layer insulator under the capacitor and over the multilevel metal interconnection structure for isolating the multilevel metal interconnection structure form the capacitor, wherein at least an anti-oxidizing film preventing penetration of oxygen is provided in the inter-layer insulator, so that the anti-oxidizing film lies covering the multilevel metal interconnection structure and under the capacitor.
Claims26
A semiconductor device having at least an electrically conductive structural element, at least a dielectric film which lies over said electrically conductive structural element, and an inter-layer insulator under said dielectric film and over said electrically conductive structural element for isolating said electrically conductive structural element form said dielectric film,
- wherein at least a film preventing penetration of oxygen is provided in said inter-layer insulator, so that said film lies covering the electrically conductive structural element and under the dielectric film.
A semiconductor device having at least a multilevel metal interconnection structure, at least a capacitor which lies over said multilevel metal interconnection structure, and an inter-layer insulator under said capacitor and over said multilevel metal interconnection structure for isolating said multilevel metal interconnection structure form said capacitor,
- wherein at least an anti-oxidizing film preventing penetration of oxygen is provided in said inter-layer insulator, so that said anti-oxidizing film lies covering the multilevel metal interconnection structure and under the capacitor.
A method of forming a semiconductor device comprising the steps of:
- forming at least an electrically conductive structural element;
- forming an inter-layer insulator over said electrically conductive structural element and said inter-layer insulator including at least a film preventing penetration of oxygen, and said film covering the electrically conductive structural element;
- and
- forming at least a dielectric film which lies over said inter-layer insulator;
- and
- carrying out a heat treatment in an oxygen-containing gas atmosphere.
A method of forming a semiconductor device comprising the steps of:
- forming at least a multilevel metal interconnection structure;
- forming an inter-layer insulator over said multilevel metal interconnection structure, and said inter-layer insulator including at least an anti-oxidizing film preventing penetration of oxygen and said anti-oxidizing film covering the multilevel metal interconnection structure;
- forming at least a capacitor which lies over said multilevel metal interconnection structure;
- and
- carrying out a heat treatment in an oxygen-containing gas atmosphere.
Dependencies are inferred from the claim text.