Self-light-emitting device and method of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsToshimitsu Konuma, Junya Maruyama
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Abstract
Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure film formation in the electrode hole 46 can be prevented. This can prevent concentration of electric current due to a short circuit between a cathode and an anode of the EL element, and can prevent failure light emission of an EL layer.
Claims34
A self-light-emitting device having an EL element, said EL element comprising:
- a TFT;
- a pixel electrode electrically connected to said TFT;
- an EL layer formed on said pixel electrode;
- and
- a cathode formed on said EL layer,
- wherein a protective portion formed of an insulator is provided in an electrode hole.
A self-light-emitting device having an EL element, said EL element comprising:
- a TFT,
- a pixel electrode electrically connected to said TFT;
- an EL layer formed on said pixel electrode;
- and
- a cathode formed on said EL layer,
- wherein a protective portion provided in an electrode hole is sandwiched between said pixel electrode and said EL layer.
A self-light-emitting device having an EL element, said EL element comprising:
- a TFT;
- a pixel electrode electrically connected to said TFT;
- an EL layer formed on said pixel electrode;
- and
- a cathode formed on said EL layer,
- wherein a protective portion provided in an electrode hole is formed of an insulator and said EL layer is formed on surfaces of said pixel electrode and said protective portion.
A self-light-emitting device having an EL element, said EL element comprising:
- a TFT;
- a pixel electrode electrically connected to said TFT;
- an EL layer formed on said pixel electrode;
- and
- a cathode formed on said EL layer,
- wherein said EL layer and a protective portion are sandwiched between said pixel electrode and said cathode.
A self-light-emitting device having an EL element, said EL element comprising:
- a TFT;
- a pixel electrode electrically connected to said TFT;
- an EL layer formed on said pixel electrode;
- and
- a cathode formed on said EL layer,
- wherein a plurality of said pixel electrodes are formed in a pixel portion and a protective portion is formed in a space between said pixel electrodes.
A method of manufacturing a self-light-emitting device comprising the steps of:
- forming on a substrate a TFT and a pixel electrode electrically connected to said TFT;
- forming an insulating film on said pixel electrode;
- and
- forming a protective portion by selectively etching said insulating film.
A method of manufacturing a self-light-emitting device comprising the steps of:
- forming on a substrate a TFT and a pixel electrode electrically connected to said TFT;
- forming an organic resin film on said pixel electrode;
- and
- forming a protective portion by selectively etching said organic resin film.
A method of manufacturing a self-light-emitting device comprising the steps of:
- forming on a substrate a TFT and a pixel electrode electrically connected to said TFT;
- forming an organic resin film on said pixel electrode;
- and
- forming a protective portion in an electrode hole and in a space between said pixel electrodes by selectively etching said organic resin film.
A self-light emitting device comprising:
- at least two first electrodes formed over a substrate with a gap between said first electrodes;
- an insulating layer formed in the gap between said first electrodes;
- an EL layer formed on said first electrodes and said insulating layer;
- and
- a second electrode opposed to said at least two first electrodes with said EL layer interposed therebetween.
A self-light emitting device comprising:
- at least one switching element;
- at least one interlayer insulating film formed over said switching element;
- a contact hole opened in said switching element;
- a pixel electrode formed on said interlayer insulating film and electrically connected to said switching element through said contact hole;
- an insulating layer formed on a portion of said pixel electrode in said contact hole;
- an EL layer formed on said pixel electrode and said insulating layer;
- and
- a second electrode formed on said EL layer.
A self-light emitting device comprising:
- at least first and second switching elements;
- at least one interlayer insulating film formed over said first and second switching elements;
- at least first and second pixel electrodes formed over said interlayer insulating film wherein said first and second pixel electrodes are electrically connected to said first and second switching elements, respectively;
- an insulating layer formed in a gap between said first and second pixel electrodes;
- an EL layer formed on said first and second pixel electrodes and said insulating layer;
- and
- a third electrode formed on said EL layer opposed to said first and second pixel electrodes.
Dependencies are inferred from the claim text.