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US 2001/0018892 A1Published application
Apparatus for fabricating single crystal
AssigneeHitachi Cable, Ltd.
InventorsSeiji Mizuniwa, Kenya Itani, Michinori Wachi
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AssigneeHitachi Cable, Ltd.
InventorsSeiji Mizuniwa, Kenya Itani, Michinori Wachi
Estimating the term…
This invention relates to fabrication of a single crystal of a compound semiconductor according to the vertical Bridgman method which improves a recess in the interface between solid and melt and can obtain a stable yield of single crystal growth characterized in that a part for discharging the heat of a crucible to the outside in the radial direction is formed at least in a part in the circumferential direction of a heater part for controlling the interface between solid and melt in a heater which surrounds the crucible and a semiconductor melt is gradually solidified from a lower part to an upper part in the crucible while maintaining the interface between solid and melt in a saddle shape, thereby growing a single crystal.
An apparatus for fabricating a single crystal of a compound semiconductor according to a vertical Bridgman method of growing a single crystal by arranging a crucible on an inner side of a heater of a vertical electrical furnace and gradually solidifying a semiconductor melt from a lower part to an upper part in the crucible, wherein at least a heater part for controlling an interface between solid and melt in said heater which surrounds the crucible is vertically divided into a plurality of parts and gaps for discharging heat of the crucible to outside in a radial direction are formed in a part in a circumferential direction to allow the heat of the crucible to flow not only in a vertical direction but also from said gaps to the outside in the radial direction.
An apparatus for fabricating a single crystal of a compound semiconductor according to a vertical Bridgman method of growing a single crystal by arranging a crucible on an inner side of a heater of a vertical electrical furnace and gradually solidifying a semiconductor melt from a lower part to an upper part in the crucible, wherein cooling means for discharging heat of the crucible to outside in a radial direction are provided at positions symmetrical with respect to a diameter direction at least in a part in a circumferential direction of a heater part for controlling the interface between solid and melt, so that the heat of the crucible flows not only in a vertical direction but also from said gaps to the outside in the radial direction.
Dependencies are inferred from the claim text.